Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 71 for “"GaSb"”.
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Sulfur Implanted GaSb for Non-Epitaxial Photovoltaic Devices
Gallium antimonide (GaSb) is a promising low-bandgap binary substrate for the fabrication of various infrared-based optoelectronic devices, particularly thermophotovoltaics (TPV). In order to make GaSb-based technologies like TPV more widely available, non-epitaxial dop- ing methods for GaSb must …
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Mid-IR type-II InAs/GaSb nanoscale superlattice sensors
… the whole infrared system. In recent years, InAs/GaSb superlattice based detectors have appeared as an interesting alternative to the present-day IR detector systems. These heterostructures have a type-II band alignment such that the conduction band of InAs layer is lower than the valence band of …
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Defect investigations in InAs/GaSb type-II strained layer superlattice
InAs/GaSb type-II strained layer superlattices are a material used for infrared detection. By adjusting the thickness of the InAs and GaSb layers, the material bandgap can be tuned to absorb photons from 3-30 um. Compared to competing materials such as HgCdTe and InSb, InAs/GaSb superlattices are …
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Developing a GASB compliant asset management tool in Winchester, Massachusetts
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Civil and Environmental Engineering, 2002.
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Characterization of Proton and Sulfur Implanted GaSb Photovoltaics and Materials
III-V compound Gallium Antimonide (GaSb), with a low bandgap of 0.72 eV at room temperature, is an attractive candidate for a variety of potential applications in optoelectronic devices. Ion implantation, among non-epitaxial methods, is a common and reliable doping technique to achieve local doping …
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Characterization of type-II GaSb quantum rings in GaAs solar cells
… photocurrent through the solar cell. Type II GaSb/GaAs quantum rings (QRs) can significantly extend the spectral response beyond the visible out towards 1.4 µm giving a near optimum band gap for concentrator solar cell applications. Also, in type II band alignment the electrons are weakly …
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Structure of and Phase Transformations in Bulk Amorphous (GaSb)i_x(Ge2)I
… study of bulk amorphous solid solutions (GaSb)i-z(Ge2L prepared by solid state amorphization under high pressures. The most powerful method for structural investigations of disordered solids has been applied — the technique of EXAFS — under a variety of conditions: at low temperatures, …
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Solving Series Resistance Problems In GaSb Thermophotovoltaics with Graphene and Other Approaches
GaSb Thermophotovoltaics are a key technology in the search for the ability to power small scale autonomous systems. In this work, MBE grown GaSb photovoltaic devices are fabricated and tested under AM 1.5 conditions. These devices displayed short circuit current values as high as 40 mA/cm2 but …
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Modelado y fabricación de células fotovoltaicas de GaSb : Aplicación a sistemas termofotovoltaicos
… células fotovoltaicas de Antimoniuro de Galio (GaSb), para su uso en sistemas de conversión fotovoltaica de radiación térmica en energía eléctrica (sistemas termofotovoltaicos), constituyendo una investigación pionera en España. Inicialmente se aborda el modelado, simulación y optimización de …
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Longwave and bi-color type-II InAs/(In)GaSb superlattice infrared detectors
… few years, interband transitions in type II InAs/GaSb strain layer superlattices (SL)have emerged as a competing technology among other IR systems. Although MCT and QWIP technologies are relatively more mature than the SL technology, the SL technology has potential to enhance performance in …
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Investigation of InAs/GaSb superlattice based nBn detectors and focal plane arrays
… the present day IR detection technologies. InAs/GaSb SLS has a type II band alignment such that the valence band of the GaSb layer is higher than the conduction band of the InAs layer. The effective band gap is decided by the energy difference between the electron miniband and the first heavy …
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Novel etch studies and passivation techniques on InAs/GaSb superlattice based infrared detectors
… work focuses on performance improvement of InAs/GaSb SLS LWIR detectors by optimization of mesa delineation and surface passivation techniques. The first part of the dissertation works on the development of optimized etching scheme for the 400μm x 400μm area single-pixel SLS detectors and for …
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Integration of CdSe/ZnS Quantum Dots into As-induced Etched Nanovoids on GaSb
… their incorporation into nanovoids formed on GaSb membranes. Nanoscale etch-pit formation on GaSb surfaces happens as a result of arsenic (As2) based in situ etch technique. The effect of in situ etch technique leading to the formation of the nanovoids was studied. Atomic force microscopy, …
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Improved capital programming powered by GASB 34 compliance : a case study from Winchester, MA
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Civil and Environmental Engineering, 2002.
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Characterization of OMVPE-grown GaSb-based epilayers using in situ reflectance and ex situ TEM
… this thesis was to investigate and characterize GaSb, GaInAsSb, and AlGaAsSb epilayers grown by organometallic vapor phase epitaxy (OMVPE). These epilayers were principally characterized using in situ spectral reflectance and ex situ transmission electron microscopy (TEM). An in situ spectral …
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Methodology for achieving GASB 34 modified approach compliance using U.S. Navy "Smart Base" facility management practices
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Civil and Environmental Engineering, 2002.
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DESIGN, FABRICATION AND CHARACTERIZATION OF EPITAXIAL AND NON-EPITAXIAL THERMO-PHOTOVOLTAIC CELLS
… of 0.51 eV (GaInAsSb quaternary) to 0.72 eV (GaSb binary) that are correspond to commonly available heat sources. The quaternary alloys are grown epitaxially while the binary GaSb devices can be realized through non-epitaxial techniques. In this work, we have pursued fabrication and design …
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Unipolar barrier strained layer superlattice infrared photodiodes : physics and barrier engineering
Type-II InAs/GaSb Strained Layer Superlattice (T2SL) is an emerging technology for infrared detection. They are being seen as a threat to 50 years old incumbent technology based on Mercury-Cadmium-Telluride (MCT) system. T2SL have been theoretically predicted to outperform MCTs. This dissertation …
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Heterostructurally Integrated Iii-V Semiconductors Fabricated by Wafer Bonding Technology
… and wafer-bonding technology to fabricate GaSb semiconductor on GaAs substrates to potentially create GaSb-on-insulator structure has been demonstrated.
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