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University of Illinois at Urbana-Champaign
Morphological Evolution During Molecular Beam Epitaxy of Germanium/germanium(001) and Silicon/germanium(111)
Abstract
dc:descriptionI have investigated the evolution of islands during the heteroepitaxy of Si on Ge(111). This study involves a systematic investigation of the island nucleation kinetics, morphology and microstructure for various thicknesses and deposition temperatures. The islands formed are predominantly three-dimensional. A large density of islands (>1011 cm-2) is observed during growth at low temperatures (600°C) yield a lower density of islands. The activation energy for the nucleation of these islands is ≈1.7 eV. The islands deposited at temperatures <550°C are predominantly coherent, while those formed at higher temperatures are incoherent, with a transition size of ≈18 nm.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Materials Science and Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Raviswaran, Arvind
- Contributors dc:contributor
-
- Cahill, D.G.
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI3070417
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/82732