{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/82732"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/82732","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Morphological Evolution During Molecular Beam Epitaxy of Germanium/germanium(001) and Silicon/germanium(111)","abstract":"I have investigated the evolution of islands during the heteroepitaxy of Si on Ge(111). This study involves a systematic investigation of the island nucleation kinetics, morphology and microstructure for various thicknesses and deposition temperatures. The islands formed are predominantly three-dimensional. A large density of islands (>1011 cm-2) is observed during growth at low temperatures (600°C) yield a lower density of islands. The activation energy for the nucleation of these islands is ≈1.7 eV. The islands deposited at temperatures <550°C are predominantly coherent, while those formed at higher temperatures are incoherent, with a transition size of ≈18 nm.","abstract_html":"I have investigated the evolution of islands during the heteroepitaxy of Si on Ge(111). This study involves a systematic investigation of the island nucleation kinetics, morphology and microstructure for various thicknesses and deposition temperatures. The islands formed are predominantly three-dimensional. A large density of islands (>1011 cm-2) is observed during growth at low temperatures (600&deg;C) yield a lower density of islands. The activation energy for the nucleation of these islands is &ap;1.7 eV. The islands deposited at temperatures <550&deg;C are predominantly coherent, while those formed at higher temperatures are incoherent, with a transition size of &ap;18 nm.","abstract_has_math":false,"creators":["Raviswaran, Arvind"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Cahill, D.G."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:52:43Z","date_published":"2015-09-25T20:52:43Z","updated_at":"2026-07-22T22:26:18Z","subjects":["Engineering, Materials Science"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3070417"],"render_values":[{"text":"(MiAaPQ)AAI3070417","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/82732","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Cahill, D.G."]},{"key":"dc:creator","label":"Author","values":["Raviswaran, Arvind"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:52:43Z","10000-01-01","2002"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/82732","(MiAaPQ)AAI3070417"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["I have investigated the evolution of islands during the heteroepitaxy of Si on Ge(111). This study involves a systematic investigation of the island nucleation kinetics, morphology and microstructure for various thicknesses and deposition temperatures. The islands formed are predominantly three-dimensional. A large density of islands (>1011 cm-2) is observed during growth at low temperatures (600°C) yield a lower density of islands. The activation energy for the nucleation of these islands is ≈1.7 eV. The islands deposited at temperatures <550°C are predominantly coherent, while those formed at higher temperatures are incoherent, with a transition size of ≈18 nm.","Made available in DSpace on 2015-09-25T20:52:43Z (GMT). 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This study involves a systematic investigation of the island nucleation kinetics, morphology and microstructure for various thicknesses and deposition temperatures. The islands formed are predominantly three-dimensional. A large density of islands (>1011 cm-2) is observed during growth at low temperatures (600°C) yield a lower density of islands. The activation energy for the nucleation of these islands is ≈1.7 eV. The islands deposited at temperatures <550°C are predominantly coherent, while those formed at higher temperatures are incoherent, with a transition size of ≈18 nm.","Made available in DSpace on 2015-09-25T20:52:43Z (GMT). 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