Phase Composition, Microstructure, and Physical Properties of Poly- and Single-Crystal Tantalum Nitride Layers

Polycrystalline delta-TaN layers deposited on SiO2 at 350°C with Ei = 20 eV in mixed Ar+15%N2 discharges initially exhibit competitive texture evolution until a single texture dominates at t ≳ 200 nm. The preferred orientation of 500-nm-thick Ei = 20 eV layers can be selectively and continuously varied from predominantly underdense 111 to nearly complete dense 002 by varying ion-to-Ta flux ratio Ji/JTa from 1.3 to ≥7.4. The change in texture is primarily due to an increased steady state atomic N coverage, resulting from collisionally-induced dissociative chemisorption of incident energetic N+2 ions, with increasing Ji/JTa.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Shin, Chan Soo

Contributors dc:contributor

• Greene, Joseph E.

• Engineering, Materials Science

Language dc:language

eng

Identifier

(MiAaPQ)AAI3044221

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/82715