{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/82715"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/82715","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Phase Composition, Microstructure, and Physical Properties of Poly- and Single-Crystal Tantalum Nitride Layers","abstract":"Polycrystalline delta-TaN layers deposited on SiO2 at 350°C with Ei = 20 eV in mixed Ar+15%N2 discharges initially exhibit competitive texture evolution until a single texture dominates at t ≳ 200 nm. The preferred orientation of 500-nm-thick Ei = 20 eV layers can be selectively and continuously varied from predominantly underdense 111 to nearly complete dense 002 by varying ion-to-Ta flux ratio Ji/JTa from 1.3 to ≥7.4. The change in texture is primarily due to an increased steady state atomic N coverage, resulting from collisionally-induced dissociative chemisorption of incident energetic N+2 ions, with increasing Ji/JTa.","abstract_html":"Polycrystalline delta-TaN layers deposited on SiO2 at 350°C with Ei = 20 eV in mixed Ar+15%N2 discharges initially exhibit competitive texture evolution until a single texture dominates at t ≳ 200 nm. The preferred orientation of 500-nm-thick Ei = 20 eV layers can be selectively and continuously varied from predominantly underdense 111 to nearly complete dense 002 by varying ion-to-Ta flux ratio Ji/JTa from 1.3 to ≥7.4. The change in texture is primarily due to an increased steady state atomic N coverage, resulting from collisionally-induced dissociative chemisorption of incident energetic N+2 ions, with increasing Ji/JTa.","abstract_has_math":false,"creators":["Shin, Chan Soo"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Greene, Joseph E."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:52:37Z","date_published":"2015-09-25T20:52:37Z","updated_at":"2026-07-22T22:26:18Z","subjects":["Engineering, Materials Science"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3044221"],"render_values":[{"text":"(MiAaPQ)AAI3044221","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/82715","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Greene, Joseph E."]},{"key":"dc:creator","label":"Author","values":["Shin, Chan Soo"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:52:37Z","10000-01-01","2002"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/82715","(MiAaPQ)AAI3044221"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Polycrystalline delta-TaN layers deposited on SiO2 at 350°C with Ei = 20 eV in mixed Ar+15%N2 discharges initially exhibit competitive texture evolution until a single texture dominates at t ≳ 200 nm. The preferred orientation of 500-nm-thick Ei = 20 eV layers can be selectively and continuously varied from predominantly underdense 111 to nearly complete dense 002 by varying ion-to-Ta flux ratio Ji/JTa from 1.3 to ≥7.4. The change in texture is primarily due to an increased steady state atomic N coverage, resulting from collisionally-induced dissociative chemisorption of incident energetic N+2 ions, with increasing Ji/JTa.","Made available in DSpace on 2015-09-25T20:52:37Z (GMT). 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The preferred orientation of 500-nm-thick Ei = 20 eV layers can be selectively and continuously varied from predominantly underdense 111 to nearly complete dense 002 by varying ion-to-Ta flux ratio Ji/JTa from 1.3 to ≥7.4. The change in texture is primarily due to an increased steady state atomic N coverage, resulting from collisionally-induced dissociative chemisorption of incident energetic N+2 ions, with increasing Ji/JTa.","Made available in DSpace on 2015-09-25T20:52:37Z (GMT). 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