Carbon Incorporation Pathways and Lattice Site Distributions in Silicon Carbide/silicon(001) and Germanium Carbide/germanium(001) Alloys Grown by Molecular Beam Epitaxy

The key results of this research can be summarized as follows: (1) In Si1-yCy/Si(001), alloys, I find that all C incorporates in substitutional sites at Ts < 580&deg;C with y &le; 0.026. At Ts &ge; 580&deg;C, increasing y and Ts leads to increase in the fraction of dicarbon complexes and the formation of periodic bulk planar structures consisting of ordered Si4C layers which form as a result of C surface segregation. (2) In contrast to Si1-yC y/Si(001), I find that irrespective of y and Ts values, complete substitutional C incorporation in Ge1-yCy/Ge(001) is not possible. A fraction of the total C concentration is always incorporated in nanoclusters. Increasing y and/or Ts leads to an increase in the fraction of C in nanoclusters due to a higher C-C encounter probability at the growth surface. (Abstract shortened by UMI.).

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Park, Se-Yang

Contributors dc:contributor

• Greene, Joseph E.

• Physics, Condensed Matter

Language dc:language

eng

Identifier

(MiAaPQ)AAI3023166

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/82706