{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/82706"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/82706","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Carbon Incorporation Pathways and Lattice Site Distributions in Silicon Carbide/silicon(001) and Germanium Carbide/germanium(001) Alloys Grown by Molecular Beam Epitaxy","abstract":"The key results of this research can be summarized as follows: (1) In Si1-yCy/Si(001), alloys, I find that all C incorporates in substitutional sites at Ts < 580&deg;C with y &le; 0.026. At Ts &ge; 580&deg;C, increasing y and Ts leads to increase in the fraction of dicarbon complexes and the formation of periodic bulk planar structures consisting of ordered Si4C layers which form as a result of C surface segregation. (2) In contrast to Si1-yC y/Si(001), I find that irrespective of y and Ts values, complete substitutional C incorporation in Ge1-yCy/Ge(001) is not possible. A fraction of the total C concentration is always incorporated in nanoclusters. Increasing y and/or Ts leads to an increase in the fraction of C in nanoclusters due to a higher C-C encounter probability at the growth surface. (Abstract shortened by UMI.).","abstract_html":"The key results of this research can be summarized as follows: (1) In Si1-yCy/Si(001), alloys, I find that all C incorporates in substitutional sites at Ts &lt; 580&amp;deg;C with y &amp;le; 0.026. At Ts &amp;ge; 580&amp;deg;C, increasing y and Ts leads to increase in the fraction of dicarbon complexes and the formation of periodic bulk planar structures consisting of ordered Si4C layers which form as a result of C surface segregation. (2) In contrast to Si1-yC y/Si(001), I find that irrespective of y and Ts values, complete substitutional C incorporation in Ge1-yCy/Ge(001) is not possible. A fraction of the total C concentration is always incorporated in nanoclusters. Increasing y and/or Ts leads to an increase in the fraction of C in nanoclusters due to a higher C-C encounter probability at the growth surface. (Abstract shortened by UMI.).","abstract_has_math":false,"creators":["Park, Se-Yang"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Greene, Joseph E."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:52:34Z","date_published":"2015-09-25T20:52:34Z","updated_at":"2026-07-22T22:26:18Z","subjects":["Physics, Condensed Matter"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3023166"],"render_values":[{"text":"(MiAaPQ)AAI3023166","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/82706","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Greene, Joseph E."]},{"key":"dc:creator","label":"Author","values":["Park, Se-Yang"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:52:34Z","10000-01-01","2001"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physics, Condensed Matter"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/82706","(MiAaPQ)AAI3023166"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The key results of this research can be summarized as follows: (1) In Si1-yCy/Si(001), alloys, I find that all C incorporates in substitutional sites at Ts < 580&deg;C with y &le; 0.026. At Ts &ge; 580&deg;C, increasing y and Ts leads to increase in the fraction of dicarbon complexes and the formation of periodic bulk planar structures consisting of ordered Si4C layers which form as a result of C surface segregation. (2) In contrast to Si1-yC y/Si(001), I find that irrespective of y and Ts values, complete substitutional C incorporation in Ge1-yCy/Ge(001) is not possible. A fraction of the total C concentration is always incorporated in nanoclusters. Increasing y and/or Ts leads to an increase in the fraction of C in nanoclusters due to a higher C-C encounter probability at the growth surface. (Abstract shortened by UMI.).","Made available in DSpace on 2015-09-25T20:52:34Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3023166.pdf: 3510762 bytes, checksum: 444b79ec4b605c00f98581cd1729b4a6 (MD5) Previous issue date: 2001","Embargo set by: Seth Robbins for item 83987 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","87 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001."]},{"key":"dc:title","label":"Title","values":["Carbon Incorporation Pathways and Lattice Site Distributions in Silicon Carbide/silicon(001) and Germanium Carbide/germanium(001) Alloys Grown by Molecular Beam Epitaxy"]}]}],"canonical_facts":{"dc:contributor":["Greene, Joseph E."],"dc:creator":["Park, Se-Yang"],"dc:date":["2015-09-25T20:52:34Z","10000-01-01","2001"],"dc:description":["The key results of this research can be summarized as follows: (1) In Si1-yCy/Si(001), alloys, I find that all C incorporates in substitutional sites at Ts < 580&deg;C with y &le; 0.026. At Ts &ge; 580&deg;C, increasing y and Ts leads to increase in the fraction of dicarbon complexes and the formation of periodic bulk planar structures consisting of ordered Si4C layers which form as a result of C surface segregation. (2) In contrast to Si1-yC y/Si(001), I find that irrespective of y and Ts values, complete substitutional C incorporation in Ge1-yCy/Ge(001) is not possible. A fraction of the total C concentration is always incorporated in nanoclusters. Increasing y and/or Ts leads to an increase in the fraction of C in nanoclusters due to a higher C-C encounter probability at the growth surface. (Abstract shortened by UMI.).","Made available in DSpace on 2015-09-25T20:52:34Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3023166.pdf: 3510762 bytes, checksum: 444b79ec4b605c00f98581cd1729b4a6 (MD5) Previous issue date: 2001","Embargo set by: Seth Robbins for item 83987 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","87 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001."],"dc:identifier":["http://hdl.handle.net/2142/82706","(MiAaPQ)AAI3023166"],"dc:language":["eng"],"dc:subject":["Physics, Condensed Matter"],"dc:title":["Carbon Incorporation Pathways and Lattice Site Distributions in Silicon Carbide/silicon(001) and Germanium Carbide/germanium(001) Alloys Grown by Molecular Beam Epitaxy"],"dc:type":["text"],"thesis:degree_discipline":["Materials Science and Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:18Z"}