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University of Illinois at Urbana-Champaign
Advanced Methods for Defect Engineering in Silicon
Abstract
dc:descriptionThe work seeks to study the effects of two newly discovered defect engineering mechanisms: the use of surface chemistry and optical stimulation on boron diffusion and activation during thermal annealing for ultrashallow junction formation. The work has a strong focus on the use of mathematical modeling to better understand the mechanism of boron diffusion, and utilizes rigorous system-based methods including parameter sensitivity analysis and maximum a posteriori (MAP) estimation to refine model parameters.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Chemical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Kwok, Tsz Mei
- Contributors dc:contributor
-
- Seebauer, Edmund G.
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI3314957
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/82411