{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/82411"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/82411","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Advanced Methods for Defect Engineering in Silicon","abstract":"The work seeks to study the effects of two newly discovered defect engineering mechanisms: the use of surface chemistry and optical stimulation on boron diffusion and activation during thermal annealing for ultrashallow junction formation. The work has a strong focus on the use of mathematical modeling to better understand the mechanism of boron diffusion, and utilizes rigorous system-based methods including parameter sensitivity analysis and maximum a posteriori (MAP) estimation to refine model parameters.","abstract_html":"The work seeks to study the effects of two newly discovered defect engineering mechanisms: the use of surface chemistry and optical stimulation on boron diffusion and activation during thermal annealing for ultrashallow junction formation. The work has a strong focus on the use of mathematical modeling to better understand the mechanism of boron diffusion, and utilizes rigorous system-based methods including parameter sensitivity analysis and maximum a posteriori (MAP) estimation to refine model parameters.","abstract_has_math":false,"creators":["Kwok, Tsz Mei"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Chemical Engineering","degree_department":null,"school":null,"contributors":["Seebauer, Edmund G."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:43:38Z","date_published":"2015-09-25T20:43:38Z","updated_at":"2026-07-22T22:26:18Z","subjects":["Engineering, Chemical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3314957"],"render_values":[{"text":"(MiAaPQ)AAI3314957","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/82411","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Seebauer, Edmund G."]},{"key":"dc:creator","label":"Author","values":["Kwok, Tsz Mei"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:43:38Z","10000-01-01","2007"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Chemical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Chemical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/82411","(MiAaPQ)AAI3314957"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The work seeks to study the effects of two newly discovered defect engineering mechanisms: the use of surface chemistry and optical stimulation on boron diffusion and activation during thermal annealing for ultrashallow junction formation. The work has a strong focus on the use of mathematical modeling to better understand the mechanism of boron diffusion, and utilizes rigorous system-based methods including parameter sensitivity analysis and maximum a posteriori (MAP) estimation to refine model parameters.","Made available in DSpace on 2015-09-25T20:43:38Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3314957.pdf: 4515143 bytes, checksum: 77ad5ab5eb21e8e9a0118f9f0d24a02a (MD5) Previous issue date: 2007","Embargo set by: Seth Robbins for item 83692 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","220 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007."]},{"key":"dc:title","label":"Title","values":["Advanced Methods for Defect Engineering in Silicon"]}]}],"canonical_facts":{"dc:contributor":["Seebauer, Edmund G."],"dc:creator":["Kwok, Tsz Mei"],"dc:date":["2015-09-25T20:43:38Z","10000-01-01","2007"],"dc:description":["The work seeks to study the effects of two newly discovered defect engineering mechanisms: the use of surface chemistry and optical stimulation on boron diffusion and activation during thermal annealing for ultrashallow junction formation. The work has a strong focus on the use of mathematical modeling to better understand the mechanism of boron diffusion, and utilizes rigorous system-based methods including parameter sensitivity analysis and maximum a posteriori (MAP) estimation to refine model parameters.","Made available in DSpace on 2015-09-25T20:43:38Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3314957.pdf: 4515143 bytes, checksum: 77ad5ab5eb21e8e9a0118f9f0d24a02a (MD5) Previous issue date: 2007","Embargo set by: Seth Robbins for item 83692 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","220 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007."],"dc:identifier":["http://hdl.handle.net/2142/82411","(MiAaPQ)AAI3314957"],"dc:language":["eng"],"dc:subject":["Engineering, Chemical"],"dc:title":["Advanced Methods for Defect Engineering in Silicon"],"dc:type":["text"],"thesis:degree_discipline":["Chemical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:18Z"}