Multiscale Simulation of Copper Nucleation on Gold

The simulation model was linked to a continuum resistive-substrate code in order to simulate copper nucleation along a resistive gold substrate. The linkage was achieved in a manner similar to Sequential Coupling, eliminating the need for parallel communication between KMC simulations along the substrate with each other and with the resistive substrate code. Further analysis of the chemical mechanism and simulation model were earned out using results of the resistive substrate simulations. It was found that the height and uniformity of nucleation and growth are highly dependent on the applied potential, and that the presence or absence of selective suppression greatly influenced the uniformity of growth. Possible inaccuracies in the estimated parameters were identified by intermittent spiked growth observed in the KCM simulations, and further simulation studies were recommended.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Chemical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Karulkar, Mohan

Contributors dc:contributor

• Alkire, Richard C.

• Engineering, Chemical

Language dc:language

eng

Identifier

(MiAaPQ)AAI3301160

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/82406