Controlling Activation Energy to Wafers and Walls in Plasma Processing Reactors for Microelectronics Fabrication

Wafer-to-wafer reproducibility during plasma etching presents another challenge. The use of low-pressure, high-density discharges results in increasing buildup of etch products in the plasma reactor resulting in increased interactions of etch products with wafer and non-wafer surfaces, alike. Consequences of such interactions have been investigated for Ar/Cl2 inductively-coupled plasma etching of poly-Si. The interactions of etch products with the wafer ultimately results in decrease in etch rates while the chamber seasons due to interactions with the non-wafer surfaces. A proportional controller using bias voltage as an actuator and etch rate as the sensor was implemented to achieve real-time, closed-loop control of etch rate to counter the effects of seasoning.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Chemical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Agarwal, Ankur

Contributors dc:contributor

• Kushner, Mark J.

• Engineering, Materials Science

Language dc:language

eng

Identifier

(MiAaPQ)AAI3301097

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/82404