{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/82404"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/82404","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Controlling Activation Energy to Wafers and Walls in Plasma Processing Reactors for Microelectronics Fabrication","abstract":"Wafer-to-wafer reproducibility during plasma etching presents another challenge. The use of low-pressure, high-density discharges results in increasing buildup of etch products in the plasma reactor resulting in increased interactions of etch products with wafer and non-wafer surfaces, alike. Consequences of such interactions have been investigated for Ar/Cl2 inductively-coupled plasma etching of poly-Si. The interactions of etch products with the wafer ultimately results in decrease in etch rates while the chamber seasons due to interactions with the non-wafer surfaces. A proportional controller using bias voltage as an actuator and etch rate as the sensor was implemented to achieve real-time, closed-loop control of etch rate to counter the effects of seasoning.","abstract_html":"Wafer-to-wafer reproducibility during plasma etching presents another challenge. The use of low-pressure, high-density discharges results in increasing buildup of etch products in the plasma reactor resulting in increased interactions of etch products with wafer and non-wafer surfaces, alike. Consequences of such interactions have been investigated for Ar/Cl2 inductively-coupled plasma etching of poly-Si. The interactions of etch products with the wafer ultimately results in decrease in etch rates while the chamber seasons due to interactions with the non-wafer surfaces. A proportional controller using bias voltage as an actuator and etch rate as the sensor was implemented to achieve real-time, closed-loop control of etch rate to counter the effects of seasoning.","abstract_has_math":false,"creators":["Agarwal, Ankur"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Chemical Engineering","degree_department":null,"school":null,"contributors":["Kushner, Mark J."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:43:34Z","date_published":"2015-09-25T20:43:34Z","updated_at":"2026-07-22T22:26:18Z","subjects":["Engineering, Materials Science"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3301097"],"render_values":[{"text":"(MiAaPQ)AAI3301097","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/82404","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Kushner, Mark J."]},{"key":"dc:creator","label":"Author","values":["Agarwal, Ankur"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:43:34Z","10000-01-01","2007"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Chemical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/82404","(MiAaPQ)AAI3301097"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Wafer-to-wafer reproducibility during plasma etching presents another challenge. The use of low-pressure, high-density discharges results in increasing buildup of etch products in the plasma reactor resulting in increased interactions of etch products with wafer and non-wafer surfaces, alike. Consequences of such interactions have been investigated for Ar/Cl2 inductively-coupled plasma etching of poly-Si. The interactions of etch products with the wafer ultimately results in decrease in etch rates while the chamber seasons due to interactions with the non-wafer surfaces. A proportional controller using bias voltage as an actuator and etch rate as the sensor was implemented to achieve real-time, closed-loop control of etch rate to counter the effects of seasoning.","Made available in DSpace on 2015-09-25T20:43:34Z (GMT). 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The use of low-pressure, high-density discharges results in increasing buildup of etch products in the plasma reactor resulting in increased interactions of etch products with wafer and non-wafer surfaces, alike. Consequences of such interactions have been investigated for Ar/Cl2 inductively-coupled plasma etching of poly-Si. The interactions of etch products with the wafer ultimately results in decrease in etch rates while the chamber seasons due to interactions with the non-wafer surfaces. A proportional controller using bias voltage as an actuator and etch rate as the sensor was implemented to achieve real-time, closed-loop control of etch rate to counter the effects of seasoning.","Made available in DSpace on 2015-09-25T20:43:34Z (GMT). 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