Surface Reaction Mechanisms for Plasma Processing of Semiconductors

Cleaning of residual polymer from trenches following etching and the deposition of a continuous barrier layer are critical processes for integration PS as ILDs. To investigate these issues, a reaction mechanism for plasma stripping of residual fluorocarbon polymer using oxygen-based chemistries has been developed and incorporated into the MCFPM. Stripping was less efficient from PS trenches having large pores and high interconnectivity, as compared to SS. Cu ionized metal physical vapor deposition was also investigated as a surrogate for barrier coating. Thin film deposition was less conformal for PS with large pores and interconnected porous networks.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Chemical and Biomolecular Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Sankaran, Arvind

Contributors dc:contributor

• Kushner, Mark J.

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI3111635

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/82359