{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/82359"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/82359","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Surface Reaction Mechanisms for Plasma Processing of Semiconductors","abstract":"Cleaning of residual polymer from trenches following etching and the deposition of a continuous barrier layer are critical processes for integration PS as ILDs. To investigate these issues, a reaction mechanism for plasma stripping of residual fluorocarbon polymer using oxygen-based chemistries has been developed and incorporated into the MCFPM. Stripping was less efficient from PS trenches having large pores and high interconnectivity, as compared to SS. Cu ionized metal physical vapor deposition was also investigated as a surrogate for barrier coating. Thin film deposition was less conformal for PS with large pores and interconnected porous networks.","abstract_html":"Cleaning of residual polymer from trenches following etching and the deposition of a continuous barrier layer are critical processes for integration PS as ILDs. To investigate these issues, a reaction mechanism for plasma stripping of residual fluorocarbon polymer using oxygen-based chemistries has been developed and incorporated into the MCFPM. Stripping was less efficient from PS trenches having large pores and high interconnectivity, as compared to SS. Cu ionized metal physical vapor deposition was also investigated as a surrogate for barrier coating. 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To investigate these issues, a reaction mechanism for plasma stripping of residual fluorocarbon polymer using oxygen-based chemistries has been developed and incorporated into the MCFPM. Stripping was less efficient from PS trenches having large pores and high interconnectivity, as compared to SS. Cu ionized metal physical vapor deposition was also investigated as a surrogate for barrier coating. Thin film deposition was less conformal for PS with large pores and interconnected porous networks.","Made available in DSpace on 2015-09-25T20:43:17Z (GMT). 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To investigate these issues, a reaction mechanism for plasma stripping of residual fluorocarbon polymer using oxygen-based chemistries has been developed and incorporated into the MCFPM. Stripping was less efficient from PS trenches having large pores and high interconnectivity, as compared to SS. Cu ionized metal physical vapor deposition was also investigated as a surrogate for barrier coating. Thin film deposition was less conformal for PS with large pores and interconnected porous networks.","Made available in DSpace on 2015-09-25T20:43:17Z (GMT). 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