Surface Diffusion Kinetics on Amorphous Silicon

In addition, the parameters for self-diffusion on amorphous silicon at processing temperatures (above 635°C) are determined by analyzing our own series of HSG growth experiments using chemical vapor deposition. The results of this study are compared to HSG growth data obtained from MBE growth at temperatures below 590°C. The parameters for intrinsic diffusion for both studies are reasonably close. Conversely, the mass transfer diffusion slows down significantly for T above 635°C during CVD growth. The activation energy increases by 0.2 eV while the pre-exponential factor decreases by a factor of two. The increase in EM for the high T regime is somewhat explainable, especially considering similarities between the diffusion mechanisms on a-Si and c-Si. The differences in the magnitude of the mass transfer diffusion parameters could be attributed in part to changes in the structural properties of the amorphous silicon film and/or hydrogen incorporation during the a-Si deposition.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Chemical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Llera-Hurlburt, Diana

Contributors dc:contributor

• Seebauer, Edmund G.

• Engineering, Chemical

Language dc:language

eng

Identifier

(MiAaPQ)AAI3017153

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/82330