{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/82330"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/82330","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Surface Diffusion Kinetics on Amorphous Silicon","abstract":"In addition, the parameters for self-diffusion on amorphous silicon at processing temperatures (above 635°C) are determined by analyzing our own series of HSG growth experiments using chemical vapor deposition. The results of this study are compared to HSG growth data obtained from MBE growth at temperatures below 590°C. The parameters for intrinsic diffusion for both studies are reasonably close. Conversely, the mass transfer diffusion slows down significantly for T above 635°C during CVD growth. The activation energy increases by 0.2 eV while the pre-exponential factor decreases by a factor of two. The increase in EM for the high T regime is somewhat explainable, especially considering similarities between the diffusion mechanisms on a-Si and c-Si. The differences in the magnitude of the mass transfer diffusion parameters could be attributed in part to changes in the structural properties of the amorphous silicon film and/or hydrogen incorporation during the a-Si deposition.","abstract_html":"In addition, the parameters for self-diffusion on amorphous silicon at processing temperatures (above 635°C) are determined by analyzing our own series of HSG growth experiments using chemical vapor deposition. The results of this study are compared to HSG growth data obtained from MBE growth at temperatures below 590°C. The parameters for intrinsic diffusion for both studies are reasonably close. Conversely, the mass transfer diffusion slows down significantly for T above 635°C during CVD growth. The activation energy increases by 0.2 eV while the pre-exponential factor decreases by a factor of two. The increase in EM for the high T regime is somewhat explainable, especially considering similarities between the diffusion mechanisms on a-Si and c-Si. The differences in the magnitude of the mass transfer diffusion parameters could be attributed in part to changes in the structural properties of the amorphous silicon film and/or hydrogen incorporation during the a-Si deposition.","abstract_has_math":false,"creators":["Llera-Hurlburt, Diana"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Chemical Engineering","degree_department":null,"school":null,"contributors":["Seebauer, Edmund G."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:43:04Z","date_published":"2015-09-25T20:43:04Z","updated_at":"2026-07-22T22:26:18Z","subjects":["Engineering, Chemical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3017153"],"render_values":[{"text":"(MiAaPQ)AAI3017153","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/82330","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Seebauer, Edmund G."]},{"key":"dc:creator","label":"Author","values":["Llera-Hurlburt, Diana"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:43:04Z","10000-01-01","2001"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Chemical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Chemical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/82330","(MiAaPQ)AAI3017153"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["In addition, the parameters for self-diffusion on amorphous silicon at processing temperatures (above 635°C) are determined by analyzing our own series of HSG growth experiments using chemical vapor deposition. The results of this study are compared to HSG growth data obtained from MBE growth at temperatures below 590°C. The parameters for intrinsic diffusion for both studies are reasonably close. Conversely, the mass transfer diffusion slows down significantly for T above 635°C during CVD growth. The activation energy increases by 0.2 eV while the pre-exponential factor decreases by a factor of two. The increase in EM for the high T regime is somewhat explainable, especially considering similarities between the diffusion mechanisms on a-Si and c-Si. The differences in the magnitude of the mass transfer diffusion parameters could be attributed in part to changes in the structural properties of the amorphous silicon film and/or hydrogen incorporation during the a-Si deposition.","Made available in DSpace on 2015-09-25T20:43:04Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3017153.pdf: 2442097 bytes, checksum: 85ae00dec7ba5911a87f0178dbeed7bb (MD5) Previous issue date: 2001","Embargo set by: Seth Robbins for item 83611 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","72 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001."]},{"key":"dc:title","label":"Title","values":["Surface Diffusion Kinetics on Amorphous Silicon"]}]}],"canonical_facts":{"dc:contributor":["Seebauer, Edmund G."],"dc:creator":["Llera-Hurlburt, Diana"],"dc:date":["2015-09-25T20:43:04Z","10000-01-01","2001"],"dc:description":["In addition, the parameters for self-diffusion on amorphous silicon at processing temperatures (above 635°C) are determined by analyzing our own series of HSG growth experiments using chemical vapor deposition. The results of this study are compared to HSG growth data obtained from MBE growth at temperatures below 590°C. The parameters for intrinsic diffusion for both studies are reasonably close. Conversely, the mass transfer diffusion slows down significantly for T above 635°C during CVD growth. The activation energy increases by 0.2 eV while the pre-exponential factor decreases by a factor of two. The increase in EM for the high T regime is somewhat explainable, especially considering similarities between the diffusion mechanisms on a-Si and c-Si. The differences in the magnitude of the mass transfer diffusion parameters could be attributed in part to changes in the structural properties of the amorphous silicon film and/or hydrogen incorporation during the a-Si deposition.","Made available in DSpace on 2015-09-25T20:43:04Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3017153.pdf: 2442097 bytes, checksum: 85ae00dec7ba5911a87f0178dbeed7bb (MD5) Previous issue date: 2001","Embargo set by: Seth Robbins for item 83611 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","72 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001."],"dc:identifier":["http://hdl.handle.net/2142/82330","(MiAaPQ)AAI3017153"],"dc:language":["eng"],"dc:subject":["Engineering, Chemical"],"dc:title":["Surface Diffusion Kinetics on Amorphous Silicon"],"dc:type":["text"],"thesis:degree_discipline":["Chemical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:18Z"}