High-Speed Indium Gallium Phosphide/indium Gallium Arsenide/indium Phosphide Doped-Channel HFETs and Implanted Gallium Arsenide Enchancement/depletion-Mode MESFETs Technology With an f(T) Over 130 GHz

Direct ion-implanted GaAs MESFET has become the primary workhorse for high-speed and millimeter-wave wireless applications due to its high performance-cost ratio. A simple low-temperature T-gate process using a novel implantation schedule for high-performance direct ion-implanted GaAs enhancement/depletion-mode MESFETs was demonstrated. The 0.12-mum gate-length D-mode MESFET shows an fT of 136 GHz and fmax of 200 GHz. With the same implantation schedule, we also fabricated, for the first time, the E-mode MESFET exhibiting fT of 120 GHz and fmax of 166 GHz.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Tang, Zhuang

Contributors dc:contributor

• Feng, Milton

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI9990158

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/81360