{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/81360"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/81360","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"High-Speed Indium Gallium Phosphide/indium Gallium Arsenide/indium Phosphide Doped-Channel HFETs and Implanted Gallium Arsenide Enchancement/depletion-Mode MESFETs Technology With an f(T) Over 130 GHz","abstract":"Direct ion-implanted GaAs MESFET has become the primary workhorse for high-speed and millimeter-wave wireless applications due to its high performance-cost ratio. A simple low-temperature T-gate process using a novel implantation schedule for high-performance direct ion-implanted GaAs enhancement/depletion-mode MESFETs was demonstrated. The 0.12-mum gate-length D-mode MESFET shows an fT of 136 GHz and fmax of 200 GHz. With the same implantation schedule, we also fabricated, for the first time, the E-mode MESFET exhibiting fT of 120 GHz and fmax of 166 GHz.","abstract_html":"Direct ion-implanted GaAs MESFET has become the primary workhorse for high-speed and millimeter-wave wireless applications due to its high performance-cost ratio. A simple low-temperature T-gate process using a novel implantation schedule for high-performance direct ion-implanted GaAs enhancement/depletion-mode MESFETs was demonstrated. The 0.12-mum gate-length D-mode MESFET shows an fT of 136 GHz and fmax of 200 GHz. With the same implantation schedule, we also fabricated, for the first time, the E-mode MESFET exhibiting fT of 120 GHz and fmax of 166 GHz.","abstract_has_math":false,"creators":["Tang, Zhuang"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Feng, Milton"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:10:44Z","date_published":"2015-09-25T20:10:44Z","updated_at":"2026-07-22T22:26:16Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9990158"],"render_values":[{"text":"(MiAaPQ)AAI9990158","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/81360","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Feng, Milton"]},{"key":"dc:creator","label":"Author","values":["Tang, Zhuang"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:10:44Z","10000-01-01","2000"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/81360","(MiAaPQ)AAI9990158"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Direct ion-implanted GaAs MESFET has become the primary workhorse for high-speed and millimeter-wave wireless applications due to its high performance-cost ratio. A simple low-temperature T-gate process using a novel implantation schedule for high-performance direct ion-implanted GaAs enhancement/depletion-mode MESFETs was demonstrated. The 0.12-mum gate-length D-mode MESFET shows an fT of 136 GHz and fmax of 200 GHz. With the same implantation schedule, we also fabricated, for the first time, the E-mode MESFET exhibiting fT of 120 GHz and fmax of 166 GHz.","Made available in DSpace on 2015-09-25T20:10:44Z (GMT). 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A simple low-temperature T-gate process using a novel implantation schedule for high-performance direct ion-implanted GaAs enhancement/depletion-mode MESFETs was demonstrated. The 0.12-mum gate-length D-mode MESFET shows an fT of 136 GHz and fmax of 200 GHz. With the same implantation schedule, we also fabricated, for the first time, the E-mode MESFET exhibiting fT of 120 GHz and fmax of 166 GHz.","Made available in DSpace on 2015-09-25T20:10:44Z (GMT). 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