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University of Illinois at Urbana-Champaign
Development and Study of Atomic Nitrogen Sources for Synthesis of Electronic Materials
Abstract
dc:descriptionLow-pressure atomic nitrogen source was used to investigate nitridation of thin silicon dioxide films at 760°C. The SiO2 films were substantially nitrided by an exposure to the atomic flux of ∼10 15 cm-2s-1 for only 30 s.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Gluschenkov, Oleg
- Contributors dc:contributor
-
- Kyekyoon (Kevin) Kim
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI9955617
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/81321