{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/81321"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/81321","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Development and Study of Atomic Nitrogen Sources for Synthesis of Electronic Materials","abstract":"Low-pressure atomic nitrogen source was used to investigate nitridation of thin silicon dioxide films at 760°C. The SiO2 films were substantially nitrided by an exposure to the atomic flux of ∼10 15 cm-2s-1 for only 30 s.","abstract_html":"Low-pressure atomic nitrogen source was used to investigate nitridation of thin silicon dioxide films at 760°C. The SiO2 films were substantially nitrided by an exposure to the atomic flux of ∼10 15 cm-2s-1 for only 30 s.","abstract_has_math":false,"creators":["Gluschenkov, Oleg"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Kyekyoon (Kevin) Kim"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:10:33Z","date_published":"2015-09-25T20:10:33Z","updated_at":"2026-07-22T22:26:16Z","subjects":["Engineering, Materials Science"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9955617"],"render_values":[{"text":"(MiAaPQ)AAI9955617","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/81321","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Kyekyoon (Kevin) Kim"]},{"key":"dc:creator","label":"Author","values":["Gluschenkov, Oleg"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:10:33Z","10000-01-01","1999"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/81321","(MiAaPQ)AAI9955617"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Low-pressure atomic nitrogen source was used to investigate nitridation of thin silicon dioxide films at 760°C. The SiO2 films were substantially nitrided by an exposure to the atomic flux of ∼10 15 cm-2s-1 for only 30 s.","Made available in DSpace on 2015-09-25T20:10:33Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9955617.pdf: 3483336 bytes, checksum: 470e780ef5da431c20bf25bad3469fc0 (MD5) Previous issue date: 1999","Embargo set by: Seth Robbins for item 82602 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","146 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999."]},{"key":"dc:title","label":"Title","values":["Development and Study of Atomic Nitrogen Sources for Synthesis of Electronic Materials"]}]}],"canonical_facts":{"dc:contributor":["Kyekyoon (Kevin) Kim"],"dc:creator":["Gluschenkov, Oleg"],"dc:date":["2015-09-25T20:10:33Z","10000-01-01","1999"],"dc:description":["Low-pressure atomic nitrogen source was used to investigate nitridation of thin silicon dioxide films at 760°C. The SiO2 films were substantially nitrided by an exposure to the atomic flux of ∼10 15 cm-2s-1 for only 30 s.","Made available in DSpace on 2015-09-25T20:10:33Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9955617.pdf: 3483336 bytes, checksum: 470e780ef5da431c20bf25bad3469fc0 (MD5) Previous issue date: 1999","Embargo set by: Seth Robbins for item 82602 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","146 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999."],"dc:identifier":["http://hdl.handle.net/2142/81321","(MiAaPQ)AAI9955617"],"dc:language":["eng"],"dc:subject":["Engineering, Materials Science"],"dc:title":["Development and Study of Atomic Nitrogen Sources for Synthesis of Electronic Materials"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:16Z"}