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University of Illinois at Urbana-Champaign
Optical Characterization of Defects and Impurities in Gallium Nitride
Abstract
dc:descriptionPhotoluminescence was used to measure the bandgap of GaN as a function of temperature in the range 2--811 K, and the results were fitted to Varshni's empirical formula to obtain an expression for the dependence of the energy gap of GaN on temperature which should be generally applicable to most high-quality, unstrained GaN material.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Reuter, Erik Earl
- Contributors dc:contributor
-
- Stephen G. Bishop
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI9953122
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/81313