{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/81313"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/81313","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Optical Characterization of Defects and Impurities in Gallium Nitride","abstract":"Photoluminescence was used to measure the bandgap of GaN as a function of temperature in the range 2--811 K, and the results were fitted to Varshni's empirical formula to obtain an expression for the dependence of the energy gap of GaN on temperature which should be generally applicable to most high-quality, unstrained GaN material.","abstract_html":"Photoluminescence was used to measure the bandgap of GaN as a function of temperature in the range 2--811 K, and the results were fitted to Varshni's empirical formula to obtain an expression for the dependence of the energy gap of GaN on temperature which should be generally applicable to most high-quality, unstrained GaN material.","abstract_has_math":false,"creators":["Reuter, Erik Earl"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Stephen G. Bishop"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:10:30Z","date_published":"2015-09-25T20:10:30Z","updated_at":"2026-07-22T22:26:16Z","subjects":["Physics, Condensed Matter"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9953122"],"render_values":[{"text":"(MiAaPQ)AAI9953122","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/81313","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Stephen G. Bishop"]},{"key":"dc:creator","label":"Author","values":["Reuter, Erik Earl"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:10:30Z","10000-01-01","1999"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physics, Condensed Matter"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/81313","(MiAaPQ)AAI9953122"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Photoluminescence was used to measure the bandgap of GaN as a function of temperature in the range 2--811 K, and the results were fitted to Varshni's empirical formula to obtain an expression for the dependence of the energy gap of GaN on temperature which should be generally applicable to most high-quality, unstrained GaN material.","Made available in DSpace on 2015-09-25T20:10:30Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9953122.pdf: 3660386 bytes, checksum: ecd5d846766a8dbf9da7375d0e26d19b (MD5) Previous issue date: 1999","Embargo set by: Seth Robbins for item 82594 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","103 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999."]},{"key":"dc:title","label":"Title","values":["Optical Characterization of Defects and Impurities in Gallium Nitride"]}]}],"canonical_facts":{"dc:contributor":["Stephen G. Bishop"],"dc:creator":["Reuter, Erik Earl"],"dc:date":["2015-09-25T20:10:30Z","10000-01-01","1999"],"dc:description":["Photoluminescence was used to measure the bandgap of GaN as a function of temperature in the range 2--811 K, and the results were fitted to Varshni's empirical formula to obtain an expression for the dependence of the energy gap of GaN on temperature which should be generally applicable to most high-quality, unstrained GaN material.","Made available in DSpace on 2015-09-25T20:10:30Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9953122.pdf: 3660386 bytes, checksum: ecd5d846766a8dbf9da7375d0e26d19b (MD5) Previous issue date: 1999","Embargo set by: Seth Robbins for item 82594 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","103 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999."],"dc:identifier":["http://hdl.handle.net/2142/81313","(MiAaPQ)AAI9953122"],"dc:language":["eng"],"dc:subject":["Physics, Condensed Matter"],"dc:title":["Optical Characterization of Defects and Impurities in Gallium Nitride"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:16Z"}