Semiconductor Optical Preamplifiers for Use in High-Speed Integrated Photoreceivers at 1.3 Um and 1.55 Um

The study is organized as follows. First, double-heterostructure optical amplifier devices are characterized at 1.55 m m for AM modulation-frequency response up to 20 GHz, possibly for the first time. Experimental results include high-frequency effects due to facet reflectivity, as well as low-frequency effects attributed to the carrier-recombination lifetime. Second, a self-aligned processing scheme is developed for fabricating semiconductor lasers, optical amplifiers, and photodetectors in this material system; this scheme emphasizes fabrication simplicity and low contact resistance. In addition, strained-layer and lattice-matched epitaxial structures for optical amplifiers and lasers are developed and grown here, although with limited success. Third, epitaxial layer designs for monolithically integrated amplifiers/photodetectors are proposed and analyzed. Design emphasis is placed on efficient coupling of desired light from the optical amplifier to photodetector, minimization of optical feedback to the amplifier, and reducing the spontaneous emission coupled to the detector.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Horton, Timothy Uel

Contributors dc:contributor

• Stillman, Gregory E.

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI9921695

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/81281