{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/81281"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/81281","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Semiconductor Optical Preamplifiers for Use in High-Speed Integrated Photoreceivers at 1.3 Um and 1.55 Um","abstract":"The study is organized as follows. First, double-heterostructure optical amplifier devices are characterized at 1.55 m m for AM modulation-frequency response up to 20 GHz, possibly for the first time. Experimental results include high-frequency effects due to facet reflectivity, as well as low-frequency effects attributed to the carrier-recombination lifetime. Second, a self-aligned processing scheme is developed for fabricating semiconductor lasers, optical amplifiers, and photodetectors in this material system; this scheme emphasizes fabrication simplicity and low contact resistance. In addition, strained-layer and lattice-matched epitaxial structures for optical amplifiers and lasers are developed and grown here, although with limited success. Third, epitaxial layer designs for monolithically integrated amplifiers/photodetectors are proposed and analyzed. Design emphasis is placed on efficient coupling of desired light from the optical amplifier to photodetector, minimization of optical feedback to the amplifier, and reducing the spontaneous emission coupled to the detector.","abstract_html":"The study is organized as follows. First, double-heterostructure optical amplifier devices are characterized at 1.55 m m for AM modulation-frequency response up to 20 GHz, possibly for the first time. Experimental results include high-frequency effects due to facet reflectivity, as well as low-frequency effects attributed to the carrier-recombination lifetime. Second, a self-aligned processing scheme is developed for fabricating semiconductor lasers, optical amplifiers, and photodetectors in this material system; this scheme emphasizes fabrication simplicity and low contact resistance. In addition, strained-layer and lattice-matched epitaxial structures for optical amplifiers and lasers are developed and grown here, although with limited success. Third, epitaxial layer designs for monolithically integrated amplifiers/photodetectors are proposed and analyzed. Design emphasis is placed on efficient coupling of desired light from the optical amplifier to photodetector, minimization of optical feedback to the amplifier, and reducing the spontaneous emission coupled to the detector.","abstract_has_math":false,"creators":["Horton, Timothy Uel"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Stillman, Gregory E."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:10:23Z","date_published":"2015-09-25T20:10:23Z","updated_at":"2026-07-22T22:26:15Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9921695"],"render_values":[{"text":"(MiAaPQ)AAI9921695","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/81281","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Stillman, Gregory E."]},{"key":"dc:creator","label":"Author","values":["Horton, Timothy Uel"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:10:23Z","10000-01-01","1998"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/81281","(MiAaPQ)AAI9921695"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The study is organized as follows. First, double-heterostructure optical amplifier devices are characterized at 1.55 m m for AM modulation-frequency response up to 20 GHz, possibly for the first time. Experimental results include high-frequency effects due to facet reflectivity, as well as low-frequency effects attributed to the carrier-recombination lifetime. Second, a self-aligned processing scheme is developed for fabricating semiconductor lasers, optical amplifiers, and photodetectors in this material system; this scheme emphasizes fabrication simplicity and low contact resistance. In addition, strained-layer and lattice-matched epitaxial structures for optical amplifiers and lasers are developed and grown here, although with limited success. Third, epitaxial layer designs for monolithically integrated amplifiers/photodetectors are proposed and analyzed. Design emphasis is placed on efficient coupling of desired light from the optical amplifier to photodetector, minimization of optical feedback to the amplifier, and reducing the spontaneous emission coupled to the detector.","Made available in DSpace on 2015-09-25T20:10:23Z (GMT). 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First, double-heterostructure optical amplifier devices are characterized at 1.55 m m for AM modulation-frequency response up to 20 GHz, possibly for the first time. Experimental results include high-frequency effects due to facet reflectivity, as well as low-frequency effects attributed to the carrier-recombination lifetime. Second, a self-aligned processing scheme is developed for fabricating semiconductor lasers, optical amplifiers, and photodetectors in this material system; this scheme emphasizes fabrication simplicity and low contact resistance. In addition, strained-layer and lattice-matched epitaxial structures for optical amplifiers and lasers are developed and grown here, although with limited success. Third, epitaxial layer designs for monolithically integrated amplifiers/photodetectors are proposed and analyzed. 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