Circuit-Level Modeling and Simulation of Semiconductor Lasers

We then present circuit-level models for vertical-cavity surface-emitting lasers (VCSELs) and their strong thermally and spatially dependent behavior. The first approach, implemented in both HSPICE and SABER, is a simple thermal model which incorporates a temperature-dependent offset current into the standard laser rate equations in order to describe thermally dependent threshold current and output-power rollover in the LI characteristics. The second model is a comprehensive circuit level model in SABER which uses analytical temperature dependencies and spatially independent rate equations to describe a VCSEI's thermal and spatial behavior. In addition to simulating thermal LI characteristics, this latter model can also be used to simulate multimode competition, temperature-dependent modulation responses, and diffusive transients in the time domain. After presenting the theory and implementation of our VCSEL models, we compare simulated and experimental data for various devices reported in the literature. Despite some important modeling and characterization issues, the data compare favorably.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Mena, Pablo Valente

Contributors dc:contributor

• Sung-Mo Kang

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI9912321

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/81270