{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/81270"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/81270","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Circuit-Level Modeling and Simulation of Semiconductor Lasers","abstract":"We then present circuit-level models for vertical-cavity surface-emitting lasers (VCSELs) and their strong thermally and spatially dependent behavior. The first approach, implemented in both HSPICE and SABER, is a simple thermal model which incorporates a temperature-dependent offset current into the standard laser rate equations in order to describe thermally dependent threshold current and output-power rollover in the LI characteristics. The second model is a comprehensive circuit level model in SABER which uses analytical temperature dependencies and spatially independent rate equations to describe a VCSEI's thermal and spatial behavior. In addition to simulating thermal LI characteristics, this latter model can also be used to simulate multimode competition, temperature-dependent modulation responses, and diffusive transients in the time domain. After presenting the theory and implementation of our VCSEL models, we compare simulated and experimental data for various devices reported in the literature. Despite some important modeling and characterization issues, the data compare favorably.","abstract_html":"We then present circuit-level models for vertical-cavity surface-emitting lasers (VCSELs) and their strong thermally and spatially dependent behavior. The first approach, implemented in both HSPICE and SABER, is a simple thermal model which incorporates a temperature-dependent offset current into the standard laser rate equations in order to describe thermally dependent threshold current and output-power rollover in the LI characteristics. The second model is a comprehensive circuit level model in SABER which uses analytical temperature dependencies and spatially independent rate equations to describe a VCSEI's thermal and spatial behavior. In addition to simulating thermal LI characteristics, this latter model can also be used to simulate multimode competition, temperature-dependent modulation responses, and diffusive transients in the time domain. After presenting the theory and implementation of our VCSEL models, we compare simulated and experimental data for various devices reported in the literature. Despite some important modeling and characterization issues, the data compare favorably.","abstract_has_math":false,"creators":["Mena, Pablo Valente"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Sung-Mo Kang"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:10:20Z","date_published":"2015-09-25T20:10:20Z","updated_at":"2026-07-22T22:26:15Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9912321"],"render_values":[{"text":"(MiAaPQ)AAI9912321","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/81270","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Sung-Mo Kang"]},{"key":"dc:creator","label":"Author","values":["Mena, Pablo Valente"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:10:20Z","10000-01-01","1998"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/81270","(MiAaPQ)AAI9912321"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["We then present circuit-level models for vertical-cavity surface-emitting lasers (VCSELs) and their strong thermally and spatially dependent behavior. The first approach, implemented in both HSPICE and SABER, is a simple thermal model which incorporates a temperature-dependent offset current into the standard laser rate equations in order to describe thermally dependent threshold current and output-power rollover in the LI characteristics. The second model is a comprehensive circuit level model in SABER which uses analytical temperature dependencies and spatially independent rate equations to describe a VCSEI's thermal and spatial behavior. In addition to simulating thermal LI characteristics, this latter model can also be used to simulate multimode competition, temperature-dependent modulation responses, and diffusive transients in the time domain. After presenting the theory and implementation of our VCSEL models, we compare simulated and experimental data for various devices reported in the literature. Despite some important modeling and characterization issues, the data compare favorably.","Made available in DSpace on 2015-09-25T20:10:20Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9912321.pdf: 11182576 bytes, checksum: 12b3f999412c69dd429ed8f56ce3199b (MD5) Previous issue date: 1998","Embargo set by: Seth Robbins for item 82551 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","251 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998."]},{"key":"dc:title","label":"Title","values":["Circuit-Level Modeling and Simulation of Semiconductor Lasers"]}]}],"canonical_facts":{"dc:contributor":["Sung-Mo Kang"],"dc:creator":["Mena, Pablo Valente"],"dc:date":["2015-09-25T20:10:20Z","10000-01-01","1998"],"dc:description":["We then present circuit-level models for vertical-cavity surface-emitting lasers (VCSELs) and their strong thermally and spatially dependent behavior. The first approach, implemented in both HSPICE and SABER, is a simple thermal model which incorporates a temperature-dependent offset current into the standard laser rate equations in order to describe thermally dependent threshold current and output-power rollover in the LI characteristics. The second model is a comprehensive circuit level model in SABER which uses analytical temperature dependencies and spatially independent rate equations to describe a VCSEI's thermal and spatial behavior. In addition to simulating thermal LI characteristics, this latter model can also be used to simulate multimode competition, temperature-dependent modulation responses, and diffusive transients in the time domain. After presenting the theory and implementation of our VCSEL models, we compare simulated and experimental data for various devices reported in the literature. Despite some important modeling and characterization issues, the data compare favorably.","Made available in DSpace on 2015-09-25T20:10:20Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9912321.pdf: 11182576 bytes, checksum: 12b3f999412c69dd429ed8f56ce3199b (MD5) Previous issue date: 1998","Embargo set by: Seth Robbins for item 82551 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","251 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998."],"dc:identifier":["http://hdl.handle.net/2142/81270","(MiAaPQ)AAI9912321"],"dc:language":["eng"],"dc:subject":["Engineering, Electronics and Electrical"],"dc:title":["Circuit-Level Modeling and Simulation of Semiconductor Lasers"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:15Z"}