A Model of Energy and Angular Distributions of Fluxes to the Substrate and Resulting Surface Topology for Plasma Etching Systems

"An important process in semiconductor manufacturing is the etching of silicon and polysilicon for device fabrication. Chlorine-based chemistries are commonly used in industry today due to the capability of highly anisotropic feature etching allowing the necessary submicron feature production. In current HDP reactors, ""microtrench"" formation, sidewall slope, and charging effects play an important role in device performance. The MC-FPM has been used to examine the mechanisms, such as specular reflection and energy and angular dependence of etch yield, involved in the shaping of the etch feature. Parameterization of these mechanisms and comparison to experiment have allowed ""cradle-to-grave"" (reactor parameters to feature shape) predictive capability with the HPEM, PCMCM, and MC-FPM coupled models for HDP etching processes."

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Hoekstra, Robert John

Contributors dc:contributor

• Kushner, Mark J.

• Physics, Fluid and Plasma

Language dc:language

eng

Identifier

(MiAaPQ)AAI9912267

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/81266