{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/81266"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/81266","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"A Model of Energy and Angular Distributions of Fluxes to the Substrate and Resulting Surface Topology for Plasma Etching Systems","abstract":"\"An important process in semiconductor manufacturing is the etching of silicon and polysilicon for device fabrication. Chlorine-based chemistries are commonly used in industry today due to the capability of highly anisotropic feature etching allowing the necessary submicron feature production. In current HDP reactors, \"\"microtrench\"\" formation, sidewall slope, and charging effects play an important role in device performance. The MC-FPM has been used to examine the mechanisms, such as specular reflection and energy and angular dependence of etch yield, involved in the shaping of the etch feature. Parameterization of these mechanisms and comparison to experiment have allowed \"\"cradle-to-grave\"\" (reactor parameters to feature shape) predictive capability with the HPEM, PCMCM, and MC-FPM coupled models for HDP etching processes.\"","abstract_html":""An important process in semiconductor manufacturing is the etching of silicon and polysilicon for device fabrication. Chlorine-based chemistries are commonly used in industry today due to the capability of highly anisotropic feature etching allowing the necessary submicron feature production. In current HDP reactors, ""microtrench"" formation, sidewall slope, and charging effects play an important role in device performance. The MC-FPM has been used to examine the mechanisms, such as specular reflection and energy and angular dependence of etch yield, involved in the shaping of the etch feature. Parameterization of these mechanisms and comparison to experiment have allowed ""cradle-to-grave"" (reactor parameters to feature shape) predictive capability with the HPEM, PCMCM, and MC-FPM coupled models for HDP etching processes."","abstract_has_math":false,"creators":["Hoekstra, Robert John"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Kushner, Mark J."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:10:19Z","date_published":"2015-09-25T20:10:19Z","updated_at":"2026-07-22T22:26:15Z","subjects":["Physics, Fluid and Plasma"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9912267"],"render_values":[{"text":"(MiAaPQ)AAI9912267","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/81266","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Kushner, Mark J."]},{"key":"dc:creator","label":"Author","values":["Hoekstra, Robert John"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:10:19Z","10000-01-01","1998"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physics, Fluid and Plasma"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/81266","(MiAaPQ)AAI9912267"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["\"An important process in semiconductor manufacturing is the etching of silicon and polysilicon for device fabrication. Chlorine-based chemistries are commonly used in industry today due to the capability of highly anisotropic feature etching allowing the necessary submicron feature production. In current HDP reactors, \"\"microtrench\"\" formation, sidewall slope, and charging effects play an important role in device performance. The MC-FPM has been used to examine the mechanisms, such as specular reflection and energy and angular dependence of etch yield, involved in the shaping of the etch feature. Parameterization of these mechanisms and comparison to experiment have allowed \"\"cradle-to-grave\"\" (reactor parameters to feature shape) predictive capability with the HPEM, PCMCM, and MC-FPM coupled models for HDP etching processes.\"","Made available in DSpace on 2015-09-25T20:10:19Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9912267.pdf: 4717016 bytes, checksum: 97c20037eace85bbc78fc51f6c825733 (MD5) Previous issue date: 1998","Embargo set by: Seth Robbins for item 82547 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","127 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998."]},{"key":"dc:title","label":"Title","values":["A Model of Energy and Angular Distributions of Fluxes to the Substrate and Resulting Surface Topology for Plasma Etching Systems"]}]}],"canonical_facts":{"dc:contributor":["Kushner, Mark J."],"dc:creator":["Hoekstra, Robert John"],"dc:date":["2015-09-25T20:10:19Z","10000-01-01","1998"],"dc:description":["\"An important process in semiconductor manufacturing is the etching of silicon and polysilicon for device fabrication. Chlorine-based chemistries are commonly used in industry today due to the capability of highly anisotropic feature etching allowing the necessary submicron feature production. In current HDP reactors, \"\"microtrench\"\" formation, sidewall slope, and charging effects play an important role in device performance. The MC-FPM has been used to examine the mechanisms, such as specular reflection and energy and angular dependence of etch yield, involved in the shaping of the etch feature. Parameterization of these mechanisms and comparison to experiment have allowed \"\"cradle-to-grave\"\" (reactor parameters to feature shape) predictive capability with the HPEM, PCMCM, and MC-FPM coupled models for HDP etching processes.\"","Made available in DSpace on 2015-09-25T20:10:19Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9912267.pdf: 4717016 bytes, checksum: 97c20037eace85bbc78fc51f6c825733 (MD5) Previous issue date: 1998","Embargo set by: Seth Robbins for item 82547 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","127 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998."],"dc:identifier":["http://hdl.handle.net/2142/81266","(MiAaPQ)AAI9912267"],"dc:language":["eng"],"dc:subject":["Physics, Fluid and Plasma"],"dc:title":["A Model of Energy and Angular Distributions of Fluxes to the Substrate and Resulting Surface Topology for Plasma Etching Systems"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:15Z"}