Aluminum Gallium Arsenide-Indium Gallium Arsenide Crystal Growth, Buried Tunnel Contact Lasers, Wafer Bonding, and Alluminum Gallium Arsenide Oxide-Based VCSELs

In order to overcome the inherent limitations of epitaxial material grown on a single substrate, wafer bonding has been developed over the last decade and is now introduced to the Solid State Devices Laboratory. Resistors are formed by simply bonding two n-type substrates together in order to optimize wafer preparation and bonding parameters. Tunnel junctions are inserted at various distances from the bonding interface to monitor the degree of annealing and disordering that occurs during wafer bonding. The wafer bonding work is the basis for fabricating more sophisticated device structures including light-emitting diodes (LEDs) and VCSELs employing buried tunnel contact junctions.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Evans, Peter Weindel

Contributors dc:contributor

• Holonyak, Nick, Jr.

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI9904450

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/81242