{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/81242"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/81242","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Aluminum Gallium Arsenide-Indium Gallium Arsenide Crystal Growth, Buried Tunnel Contact Lasers, Wafer Bonding, and Alluminum Gallium Arsenide Oxide-Based VCSELs","abstract":"In order to overcome the inherent limitations of epitaxial material grown on a single substrate, wafer bonding has been developed over the last decade and is now introduced to the Solid State Devices Laboratory. Resistors are formed by simply bonding two n-type substrates together in order to optimize wafer preparation and bonding parameters. Tunnel junctions are inserted at various distances from the bonding interface to monitor the degree of annealing and disordering that occurs during wafer bonding. The wafer bonding work is the basis for fabricating more sophisticated device structures including light-emitting diodes (LEDs) and VCSELs employing buried tunnel contact junctions.","abstract_html":"In order to overcome the inherent limitations of epitaxial material grown on a single substrate, wafer bonding has been developed over the last decade and is now introduced to the Solid State Devices Laboratory. Resistors are formed by simply bonding two n-type substrates together in order to optimize wafer preparation and bonding parameters. Tunnel junctions are inserted at various distances from the bonding interface to monitor the degree of annealing and disordering that occurs during wafer bonding. The wafer bonding work is the basis for fabricating more sophisticated device structures including light-emitting diodes (LEDs) and VCSELs employing buried tunnel contact junctions.","abstract_has_math":false,"creators":["Evans, Peter Weindel"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Holonyak, Nick, Jr."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:10:12Z","date_published":"2015-09-25T20:10:12Z","updated_at":"2026-07-22T22:26:15Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9904450"],"render_values":[{"text":"(MiAaPQ)AAI9904450","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/81242","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Holonyak, Nick, Jr."]},{"key":"dc:creator","label":"Author","values":["Evans, Peter Weindel"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:10:12Z","10000-01-01","1998"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/81242","(MiAaPQ)AAI9904450"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["In order to overcome the inherent limitations of epitaxial material grown on a single substrate, wafer bonding has been developed over the last decade and is now introduced to the Solid State Devices Laboratory. Resistors are formed by simply bonding two n-type substrates together in order to optimize wafer preparation and bonding parameters. Tunnel junctions are inserted at various distances from the bonding interface to monitor the degree of annealing and disordering that occurs during wafer bonding. The wafer bonding work is the basis for fabricating more sophisticated device structures including light-emitting diodes (LEDs) and VCSELs employing buried tunnel contact junctions.","Made available in DSpace on 2015-09-25T20:10:12Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9904450.pdf: 2358573 bytes, checksum: d6de2b335a07ac7895d951676aef61d5 (MD5) Previous issue date: 1998","Embargo set by: Seth Robbins for item 82523 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","53 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998."]},{"key":"dc:title","label":"Title","values":["Aluminum Gallium Arsenide-Indium Gallium Arsenide Crystal Growth, Buried Tunnel Contact Lasers, Wafer Bonding, and Alluminum Gallium Arsenide Oxide-Based VCSELs"]}]}],"canonical_facts":{"dc:contributor":["Holonyak, Nick, Jr."],"dc:creator":["Evans, Peter Weindel"],"dc:date":["2015-09-25T20:10:12Z","10000-01-01","1998"],"dc:description":["In order to overcome the inherent limitations of epitaxial material grown on a single substrate, wafer bonding has been developed over the last decade and is now introduced to the Solid State Devices Laboratory. Resistors are formed by simply bonding two n-type substrates together in order to optimize wafer preparation and bonding parameters. Tunnel junctions are inserted at various distances from the bonding interface to monitor the degree of annealing and disordering that occurs during wafer bonding. The wafer bonding work is the basis for fabricating more sophisticated device structures including light-emitting diodes (LEDs) and VCSELs employing buried tunnel contact junctions.","Made available in DSpace on 2015-09-25T20:10:12Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9904450.pdf: 2358573 bytes, checksum: d6de2b335a07ac7895d951676aef61d5 (MD5) Previous issue date: 1998","Embargo set by: Seth Robbins for item 82523 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","53 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998."],"dc:identifier":["http://hdl.handle.net/2142/81242","(MiAaPQ)AAI9904450"],"dc:language":["eng"],"dc:subject":["Engineering, Electronics and Electrical"],"dc:title":["Aluminum Gallium Arsenide-Indium Gallium Arsenide Crystal Growth, Buried Tunnel Contact Lasers, Wafer Bonding, and Alluminum Gallium Arsenide Oxide-Based VCSELs"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:15Z"}