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University of Illinois at Urbana-Champaign
The Development of High-Frequency Gallium Arsenide MESFET and Integrated Circuit Technology
Abstract
dc:descriptionSpeed and gain measurements are presented for discrete devices and integrated circuits. In addition, the use of the established process to produce the first high-frequency GaAs MOSFET is presented.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Middleton, Jeremy Richard
- Contributors dc:contributor
-
- Feng, Milton
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI9812708
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/81216