Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 27 for “"MESFET"”.
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Systematic Optimization Technique for MESFET Modeling
… of metal-semiconductor field effect transistor (MESFET) devices are essential in all modern microwave and millimeter wave applications. Those models are used for robust designs and fabrication development. The sophistication of modern communication systems urged the need of monolithic microwave …
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Manufacturable Millimeter-Wave Gallium Arsenide MESFET Integrated Circuit Technology
Speed, noise and gain measurements are reviewed for discrete and monolithic millimeter-wave and digital ICs. Future plans for low-noise 0.10 $\mu$m T-gate FETs using ion-implantation and electron-beam lithography techniques are also discussed.
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Ion -Implanted GaAs MESFET MMICs for 77-Ghz Automotive Radar
… Illinois in a 0.12-mum direct ion-implanted GaAs MESFET process. The circuits are suitable for insertion into a 77-GHz automotive radar system. This work develops non-linear, linear and noise models for the MESFET and Schottky diode and synthesizes models for a variety of coplanar passive …
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100 -Ghz Enhancement and Depletion Mode MESFET MMIC Process Development
Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs
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Small Signal Equivalent Circuit Extraction From A Gallium Arsenide MESFET Device
… Metal Semiconductor Field Effect Transistor (MESFET) devices has enabled the miniaturization of pagers, cellular phones, and other electronic devices. With these MESFET devices comes the need to model them. This thesis extracts a small signal equivalent circuit model from a Gallium Arsenide …
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The Development of High-Frequency Gallium Arsenide MESFET and Integrated Circuit Technology
Speed and gain measurements are presented for discrete devices and integrated circuits. In addition, the use of the established process to produce the first high-frequency GaAs MOSFET is presented.
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Development of Direct Ion -Implanted Gallium Arsenide MESFET and Low-Actuation-Voltage RF MEM Switches
The high-performance GaAs MESFETs will provide a solution to low-cost NMCs, and the circuit results justify the readiness of this technology in Ka-band and V-band applications. The low operation-voltage switches will facilitate the direct integration with current MMICs and provide a solution to …
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A nonlinear statistical MESFET model using low order statistics of equivalent circuit model parameter sets
A nonlinear statistical MESFET model is presented which shows good agreement with measured results. A single stage GaAs power amplifier tuned at 13.5 GHz is simulated with the model and accurately predicts output power, input return loss, and power added efficiency. Not only is nominal performance …
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A 12-bit 500 MHz GaAs MESFET digital-to-analog converter with p+ ohmic contact isolation
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1992.
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High-Speed Indium Gallium Phosphide/indium Gallium Arsenide/indium Phosphide Doped-Channel HFETs and Implanted Gallium Arsenide Enchancement/depletion-Mode MESFETs Technology With an f(T) Over 130 GHz
Direct ion-implanted GaAs MESFET has become the primary workhorse for high-speed and millimeter-wave wireless applications due to its high performance-cost ratio. A simple low-temperature T-gate process using a novel implantation schedule for high-performance direct ion-implanted GaAs …
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Studio di modelli fisici per la simulazione di effetti di backgate e dispersione a bassa frequenza in GaAs MESFET
Il lavoro di tesi presenta l'implementazione di un modello fisico deriva diffusione a doppio portatore per FET a doppio portatore. Effetti di trappoli e backgate sono inclusi. Il programma fornisce le caratteristiche DC e di piccolo segnale a partire dai parametri fisici di FET per alte frequenze.
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Gallium arsenide field effect transistors microstrip integrated circuit dielectric resonator oscillators
… Circuit Dielectric Resonator Oscillators (GaAs MESFET MIC DROs) - the different types, their design and their performance compared to other high Q factor (ie narrowband) microwave oscillators. The thesis has three major objectives. The first is to collate the information required to build …
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Development of Compound Semiconductor FET and Integrated Low -Voltage RF MEMS Switch Technology for Reconfigurable MMIC Applications
… for various uses: the ion-implanted GaAs MESFET, the AlGaN/GaN HEMT, and the RF MEMS switch. The MESFET is a relatively mature technology that has proven to be a low-cost solution for many MMIC uses, and this work will describe enhancement- and depletion-mode 0.12-mum-gate device …
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Diode Predistortion Linearization for Power Amplifier RFICs in Digital Radios
… into a single, linearized PA RFIC chip. MESFET and HBT based diode linearizers are studied for use with corresponding MESFET and HBT based PAs in the 2.68 GHz and 1.95 GHz frequency bands, respectively. Results show an improvement in adjacent channel power ratio (ACPR) due to the …
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Modeling and simulation of analog devices using PRECISE
… Semiconductor Field Effect Transistor (GaAs MESFET) device using the same methodology that has been used to develop the computer model for the Bipolar Junction Transistor (BUT) device. Hence this research, in addition to developing a library of a hundred and fifty odd successful models in the …
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Nano-electro-mechanical systems fabricated by tip-based nanofabrication
… nanofluidic channels. Finally, we demonstrated a MESFET transistor using this TBN method with a heated AFM tip. MESFET devices with one, two, four and eight fins were fabricated, demonstrating the capability of this TBN method. I-V measurements proved the functionality of the transistor. This …
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Radio frequency power amplifiers for portable communication systems
… and Metal-Semiconductor Field Effect Transistor (MESFET) are evaluated as active devices in high-efficiency RF PA designs. Two amplifier classes (class CE and class F) meet the system requirements of an 850 MHz operating frequency, a power output of 3 W, a battery supply voltage of 9 Vdc, and a …
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Design and Characterization of Fully Monolithic Millimeter -Wave Oscillators
… metal-semiconductor field effect transistor (MESFET). The results highlight the inextricable linkage of phase noise to both device parameters and circuit design methodology. The prediction of phase noise is accomplished through modeling of low-frequency noise of devices and the use of …
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Development of Gallium Nitride-Based Power Electronic Devices Using Plasma-Assisted Molecular Beam Epitaxy
… (FET) devices such as metal semiconductor FET (MESFET) and high electron mobility transistor (HEMT). In order to investigate the GaN-based FETs, theoretical principles, processing conditions, and characterization skills of the ohmic and Schottky metal contacts are discussed. The present work …
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