Silicon/silicon-Germanium Modulation-Doped Field-Effect Transistors for Complementary Circuit Applications

In this work, the fabrication and characteristics of p-type and n-type MODFETs on a relaxed-SiGe buffer was investigated. Record-performance was achieved for the p-type MODFETs. The fabrication of enhancement-mode n-type MODFETs with three different capping layer configurations was also investigated. A novel super-self-aligned process for the fabrication of enhancement-mode MODFETs on uncapped, depleted heterostructures with ion-implanted source and drain was developed.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Arafa, Mohamed A.

Contributors dc:contributor

• I. Adesida

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI9812521

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/81198