Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 57 for “"Self-aligned"”.
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InGaAs self-aligned HEMT for logic applications
… for logic devices but they are typically not self-aligned nor enhancement mode and as such are not suitable for scaled VLSI applications. In this work a novel self-aligned device architecture for InGaAs HEMT devices is proposed and demonstrated. The key feature of the process is a non-alloyed …
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Self-aligned AlGaN/GaN transistors for sub-mm wave applications
This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source and drain access resistance. The eventual fabrication of self-aligned …
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Development of Iii-Nitride Non-Polar Leds and Self-Aligned Laser Structure
… power. The system power conversion efficiency itself is dictated by the LED internal quantum efficiency (IQE), the light extraction and the efficiency and the device package.</p> <p>In this dissertation, an effort has been made to improve the overall efficiency of III-N LED devices by controlling …
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Quantification of the Depth-of-Field in a Self-Aligned Focusing Schlieren System
<p>This thesis investigates self-aligned focusing schlieren (SAFS) as a step toward future volumetric and quantitative measurements of three-dimensional compressible flows. Conventional schlieren imaging provides valuable visualization of density gradients, but it records only a line-of-sight …
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Vacuum Transistors Based on III-Nitrides Field Emitter Arrays with Self-Aligned Gate
… long-term stability of GaN emitter tips. Second, self-aligned-gate structures are developed on GaN field emitter arrays to demonstrate vacuum transistors with reduced operating voltages. The device performance is further improved by sharpening the field emission tips and optimizing device …
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Self-Aligned Fabrication of Nanogap Based Zinc Oxide Nanowire Schottky Devices Using Adhesion Lithography
… than 10 nm to tens of nanometers. A-Lith uses self-assembled monolayers to alter the adhesion forces between metals or oxides, which can be overlapped and peeled away from each other to form asymmetric or symmetric nanogaps. To realize bottom-up nanowire devices using A-Lith, the growth of ZnO …
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A reliability comparison of recessed-gate and self-aligned gate small signal GaAs MESFETS utilizing an accelerated life test set designed for large scale automated testing
… a) recessed-gate MESFETs with TiPdAu gates b) realigned self-aligned gate (RSAG) MESFETs with TiWN<sub>x</sub> Schottky and TiPdAu overlay c) planarized self-aligned gate (PSAG) MESFETs with TiWN<sub>x</sub> Schottky and TiPdAu overlay. 2) to study the changes in I<sub>dss</sub>, R<sub>g</sub>, …
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Advanced Process Development for Contacts to Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors (Hemts)
… propose fabrication schemes for novel high speed self-aligned and non-self-aligned AlGaN/GaN high electron mobility trasistors (HEMTs) employing Ir/Pt/Au or Ni/Au gate and non-alloyed ohmic contact metallizations.
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Silicon/silicon-Germanium Modulation-Doped Field-Effect Transistors for Complementary Circuit Applications
… was also investigated. A novel super-self-aligned process for the fabrication of enhancement-mode MODFETs on uncapped, depleted heterostructures with ion-implanted source and drain was developed.
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Design-technology co-optimization in next generation lithography
… technique (e.g. litho-etch-litho-etch, self-aligned pattering) • new design methodology (e.g. restricted design rule, 1-D design) • new illumination system (e.g. extreme ultraviolet lithography, electronbeam, directed self-assembly) • new simulation and verification approach (e.g. …
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The fabrication and market analysis of lattice mismatched devices
… not achievable on the initial substrate. A self-aligned mesa structure process was developed to fabricate a prototype HBT device utilizing an InxGalxAs lattice mismatched semiconductor substrate. The self-aligned mesa process eliminated the need for complicated metal etch steps by using a …
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A Sub-0.1-Micron PtSi Schottky Source/drain MOSFET
… gate lithography, 100-A sidewall oxides, self-aligned PtSi, and no intentional doping. The thin gate and sidewall oxides enable high field emission currents at low voltages. These devices exhibit on-state currents of 200-400 $\mu$A/$\mu$m and on-off ratios of 20 to 50. Cryogenic …
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Advanced process development for contacts to algan/gan high electron mobility transistors (HEMTS)
… propose fabrication schemes for novel high speed self-aligned and non-self-aligned AlGaN/GaN high electron mobility trasistors (HEMTs) employing Ir/Pt/Au or Ni/Au gate and non-alloyed ohmic contact metallizations.
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p-GaN Platform for Next-Generation GaN Complementary Transistors and Circuits
… scaling of novel complementary transistors (self-aligned-gate p-FET and self-aligned metal/p-GaN-gate HEMT) is pursued. Alternative metallization schemes and a new technology for gate recess in GaN p-FETs are demonstrated. The unique characteristics of the p-FET are revealed through a …
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Development of an integrated capillary valve-based preconcentrator and surface-based immunoassay
… and immunoassay was developed. A novel, self-aligned method for patterning Nafion resin was developed and applied to create a preconcentrator. In a parallel effort, a surface-based immunoassay was developed and optimized for use with the preconcentrator. Experiments were carried out with …
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Growth and characterisation of platinum and palladium catalysed silicon based nanostructures for nano-device fabrication
… coatings. Furthermore, MBE was shown to produce self-aligned platinum silicide (PtSi) nanoclusters and nanowires on Si (111) substrates near the eutectic point (T = 978 °C and 67 at% Si) of the platinum silicon system. With an added silicon source in the MBE annealing chamber, the formation of …
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Planar nanowire high electron mobility transistor and down-scaling of planar nanowire
… (NW-HEMTs) have been demonstrated with self-aligned <110> planar GaAs NW channels capped by a thin film AlGaAs barrier. The planar NW-HEMTs exhibit uniform and scalable DC characteristics; and resolve the electrical non-uniformity issues in VLS grown NW-FETs with doped NW channels. …
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Piezoelectric effects in GaAs MESFET's
… performance shifts in fully planarized self aligned gate GaAs MESFETS. The devices were 10 micron gate periphery FET devices with a 0.4 micron etched gate length. The test devices included both enhancement mode and depletion mode structures. The major contributors to the stress in GaAs …
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InGaAs MOSFETs for logic and RF applications : reliability, scalability and transport studies
… it identifies a new instability mechanism in self-aligned InGaAs MOSFETs caused by fluorine migration and passivation of Si dopants in n-InAlAs. This problem is successfully mitigated by eliminating n-InAlAs from the device structure. The new device design achieves improved stability and …
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Three-dimensional nanofabrication by electron-beam lithography and directed self-assembly
… lithography (EBL), block copolymer (BCP) self-assembly, and capillary force-induced self-assembly. We first developed new processes for fabricating 3D nanostructures using a hydrogen silsesquioxane (HSQ) and poly(methylmeth-acrylate) (PMMA) bilayer resist stack. We demonstrated …
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