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University of Illinois at Urbana-Champaign
Advanced Process Development for Contacts to Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors (Hemts)
Abstract
dc:descriptionThe developed ion-implantation process was used to propose fabrication schemes for novel high speed self-aligned and non-self-aligned AlGaN/GaN high electron mobility trasistors (HEMTs) employing Ir/Pt/Au or Ni/Au gate and non-alloyed ohmic contact metallizations.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical and Computer Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Ofuonye, Benedict Chukwuka
- Contributors dc:contributor
-
- Adesida, Ilesanmi
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI3406791
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/81156