High-Speed and High-Sensitivity Metal-Semiconductor-Metal Photodetectors for Optoelectronic Integrated Circuit Applications

A variety of techniques to enhance the sensitivity and bandwidth of front-illuminated MSMPDs is presented, proposed, and demonstrated. A reduction in the absorption layer thickness of a conventional InGaAs-based MSMPD enabled bandwidths in excess of 19 GHz, at a wavelength of 1.55 μm, to be obtained with the use of simple optical lithography tools. MSMPDs using an InGaAs absorption layer, employing a conventional layout, and utilizing transparent electrode materials composed of combinations of $\rm In\sb2O\sb3,$ CdO, and SnO$\sb2$ achieved responsivities of up to 0.69 A/W at a wavelength of 1.3 μm. Modifications to the layout of the conventional MSMPD enabled enormous reductions in dark current to be obtained. These modifications afford a reduction in dark current by reducing thermionic emission processes at the Schottky contacts of the MSMPDs. An MSMPD exhibiting 52.9 pA of dark current corresponding to a dark current density of 21.1 fA/\rmμ m\sp2 was demonstrated.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Wohlmuth, Walter Anthony

Contributors dc:contributor

• I. Adesida

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI9737292

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/81195