{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/81195"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/81195","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"High-Speed and High-Sensitivity Metal-Semiconductor-Metal Photodetectors for Optoelectronic Integrated Circuit Applications","abstract":"A variety of techniques to enhance the sensitivity and bandwidth of front-illuminated MSMPDs is presented, proposed, and demonstrated. A reduction in the absorption layer thickness of a conventional InGaAs-based MSMPD enabled bandwidths in excess of 19 GHz, at a wavelength of 1.55 $\\mu$m, to be obtained with the use of simple optical lithography tools. MSMPDs using an InGaAs absorption layer, employing a conventional layout, and utilizing transparent electrode materials composed of combinations of $\\rm In\\sb2O\\sb3,$ CdO, and SnO$\\sb2$ achieved responsivities of up to 0.69 A/W at a wavelength of 1.3 $\\mu$m. Modifications to the layout of the conventional MSMPD enabled enormous reductions in dark current to be obtained. These modifications afford a reduction in dark current by reducing thermionic emission processes at the Schottky contacts of the MSMPDs. An MSMPD exhibiting 52.9 pA of dark current corresponding to a dark current density of 21.1 fA/$\\rm\\mu m\\sp2$ was demonstrated.","abstract_html":"A variety of techniques to enhance the sensitivity and bandwidth of front-illuminated MSMPDs is presented, proposed, and demonstrated. A reduction in the absorption layer thickness of a conventional InGaAs-based MSMPD enabled bandwidths in excess of 19 GHz, at a wavelength of 1.55 <span class=\"etd-inline-math\">&mu;</span>m, to be obtained with the use of simple optical lithography tools. MSMPDs using an InGaAs absorption layer, employing a conventional layout, and utilizing transparent electrode materials composed of combinations of $\\rm In\\sb2O\\sb3,$ CdO, and SnO$\\sb2$ achieved responsivities of up to 0.69 A/W at a wavelength of 1.3 <span class=\"etd-inline-math\">&mu;</span>m. Modifications to the layout of the conventional MSMPD enabled enormous reductions in dark current to be obtained. These modifications afford a reduction in dark current by reducing thermionic emission processes at the Schottky contacts of the MSMPDs. An MSMPD exhibiting 52.9 pA of dark current corresponding to a dark current density of 21.1 fA/<span class=\"etd-inline-math\">\\rm&mu; m\\sp2</span> was demonstrated.","abstract_has_math":true,"creators":["Wohlmuth, Walter Anthony"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["I. Adesida"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:10:00Z","date_published":"2015-09-25T20:10:00Z","updated_at":"2026-07-22T22:26:15Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9737292"],"render_values":[{"text":"(MiAaPQ)AAI9737292","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/81195","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["I. 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A reduction in the absorption layer thickness of a conventional InGaAs-based MSMPD enabled bandwidths in excess of 19 GHz, at a wavelength of 1.55 $\\mu$m, to be obtained with the use of simple optical lithography tools. MSMPDs using an InGaAs absorption layer, employing a conventional layout, and utilizing transparent electrode materials composed of combinations of $\\rm In\\sb2O\\sb3,$ CdO, and SnO$\\sb2$ achieved responsivities of up to 0.69 A/W at a wavelength of 1.3 $\\mu$m. Modifications to the layout of the conventional MSMPD enabled enormous reductions in dark current to be obtained. These modifications afford a reduction in dark current by reducing thermionic emission processes at the Schottky contacts of the MSMPDs. An MSMPD exhibiting 52.9 pA of dark current corresponding to a dark current density of 21.1 fA/$\\rm\\mu m\\sp2$ was demonstrated.","Made available in DSpace on 2015-09-25T20:10:00Z (GMT). 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Adesida"],"dc:creator":["Wohlmuth, Walter Anthony"],"dc:date":["2015-09-25T20:10:00Z","10000-01-01","1997"],"dc:description":["A variety of techniques to enhance the sensitivity and bandwidth of front-illuminated MSMPDs is presented, proposed, and demonstrated. A reduction in the absorption layer thickness of a conventional InGaAs-based MSMPD enabled bandwidths in excess of 19 GHz, at a wavelength of 1.55 $\\mu$m, to be obtained with the use of simple optical lithography tools. MSMPDs using an InGaAs absorption layer, employing a conventional layout, and utilizing transparent electrode materials composed of combinations of $\\rm In\\sb2O\\sb3,$ CdO, and SnO$\\sb2$ achieved responsivities of up to 0.69 A/W at a wavelength of 1.3 $\\mu$m. Modifications to the layout of the conventional MSMPD enabled enormous reductions in dark current to be obtained. These modifications afford a reduction in dark current by reducing thermionic emission processes at the Schottky contacts of the MSMPDs. 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