Modulation-Doped Field-Effect Transistors for High-Power Microwave Applications

The effect of drain-sides cap recess distance on InGaAs/GaAs PHEMT device performance at both dc and rf frequencies is investigated. This investigation is achieved though the development of a four-layer electron beam resist technique and sequential wet and dry selective etching. A high linearity of device characteristics is important to minimize intermodulation of high frequency signals under high-power operation. The linearity of device performance is investigated through the comparison of InGaAs/GaAs PHEMTs and doped channel FETs at dc and rf operation. InP is investigated as a channel material for use in high-power FETs due to the intrinsic properties including high breakdown voltage, high electron saturation velocity, high electron velocity at high electric field, and high thermal conductivity. Forming low-resistance ohmic contacts to modulation-doped InP channel heterostructures is a challenging issue and is investigated through the study of ion-implanted alloyed contacts and through cap layer design for nonalloyed contacts.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Grundbacher, Ronald Waldo

Contributors dc:contributor

• I. Adesida

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI9737125

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/81181