{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/81181"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/81181","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Modulation-Doped Field-Effect Transistors for High-Power Microwave Applications","abstract":"The effect of drain-sides cap recess distance on InGaAs/GaAs PHEMT device performance at both dc and rf frequencies is investigated. This investigation is achieved though the development of a four-layer electron beam resist technique and sequential wet and dry selective etching. A high linearity of device characteristics is important to minimize intermodulation of high frequency signals under high-power operation. The linearity of device performance is investigated through the comparison of InGaAs/GaAs PHEMTs and doped channel FETs at dc and rf operation. InP is investigated as a channel material for use in high-power FETs due to the intrinsic properties including high breakdown voltage, high electron saturation velocity, high electron velocity at high electric field, and high thermal conductivity. Forming low-resistance ohmic contacts to modulation-doped InP channel heterostructures is a challenging issue and is investigated through the study of ion-implanted alloyed contacts and through cap layer design for nonalloyed contacts.","abstract_html":"The effect of drain-sides cap recess distance on InGaAs/GaAs PHEMT device performance at both dc and rf frequencies is investigated. This investigation is achieved though the development of a four-layer electron beam resist technique and sequential wet and dry selective etching. A high linearity of device characteristics is important to minimize intermodulation of high frequency signals under high-power operation. The linearity of device performance is investigated through the comparison of InGaAs/GaAs PHEMTs and doped channel FETs at dc and rf operation. InP is investigated as a channel material for use in high-power FETs due to the intrinsic properties including high breakdown voltage, high electron saturation velocity, high electron velocity at high electric field, and high thermal conductivity. Forming low-resistance ohmic contacts to modulation-doped InP channel heterostructures is a challenging issue and is investigated through the study of ion-implanted alloyed contacts and through cap layer design for nonalloyed contacts.","abstract_has_math":false,"creators":["Grundbacher, Ronald Waldo"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["I. 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This investigation is achieved though the development of a four-layer electron beam resist technique and sequential wet and dry selective etching. A high linearity of device characteristics is important to minimize intermodulation of high frequency signals under high-power operation. The linearity of device performance is investigated through the comparison of InGaAs/GaAs PHEMTs and doped channel FETs at dc and rf operation. InP is investigated as a channel material for use in high-power FETs due to the intrinsic properties including high breakdown voltage, high electron saturation velocity, high electron velocity at high electric field, and high thermal conductivity. Forming low-resistance ohmic contacts to modulation-doped InP channel heterostructures is a challenging issue and is investigated through the study of ion-implanted alloyed contacts and through cap layer design for nonalloyed contacts.","Made available in DSpace on 2015-09-25T20:09:57Z (GMT). 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This investigation is achieved though the development of a four-layer electron beam resist technique and sequential wet and dry selective etching. A high linearity of device characteristics is important to minimize intermodulation of high frequency signals under high-power operation. The linearity of device performance is investigated through the comparison of InGaAs/GaAs PHEMTs and doped channel FETs at dc and rf operation. InP is investigated as a channel material for use in high-power FETs due to the intrinsic properties including high breakdown voltage, high electron saturation velocity, high electron velocity at high electric field, and high thermal conductivity. Forming low-resistance ohmic contacts to modulation-doped InP channel heterostructures is a challenging issue and is investigated through the study of ion-implanted alloyed contacts and through cap layer design for nonalloyed contacts.","Made available in DSpace on 2015-09-25T20:09:57Z (GMT). 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