Electrostatic Analysis of Nanoelectromechanical Systems

In addition to the multiscale method, we present an ab initio study of electronic properties of graphene flakes and nanoribbons adsorbed on clean and H-passivated (100) silicon surfaces. The graphene electronic properties are not perturbed by the H-passivated Si substrate. In contrast, the interaction between the clean Si surface and graphene can significantly change the bandstructure of graphene. This is caused by the covalent bonding formed by C and surface Si atoms, which changes the pi-band network of the graphene layer. The dispersion curves and density of states calculations show that the bonded Si-C surface states are highly delocalized and located near the Fermi energy. Adsorption energy indicates that the graphene flakes and nanoribbons are stable on clean Si(100) surfaces.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical and Computer Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Xu, Yang

Contributors dc:contributor

• Aluru, Narayana R.

• Nanotechnology

Language dc:language

eng

Identifier

(MiAaPQ)AAI3395548

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/81152