{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/81152"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/81152","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Electrostatic Analysis of Nanoelectromechanical Systems","abstract":"In addition to the multiscale method, we present an ab initio study of electronic properties of graphene flakes and nanoribbons adsorbed on clean and H-passivated (100) silicon surfaces. The graphene electronic properties are not perturbed by the H-passivated Si substrate. In contrast, the interaction between the clean Si surface and graphene can significantly change the bandstructure of graphene. This is caused by the covalent bonding formed by C and surface Si atoms, which changes the pi-band network of the graphene layer. The dispersion curves and density of states calculations show that the bonded Si-C surface states are highly delocalized and located near the Fermi energy. Adsorption energy indicates that the graphene flakes and nanoribbons are stable on clean Si(100) surfaces.","abstract_html":"In addition to the multiscale method, we present an ab initio study of electronic properties of graphene flakes and nanoribbons adsorbed on clean and H-passivated (100) silicon surfaces. The graphene electronic properties are not perturbed by the H-passivated Si substrate. In contrast, the interaction between the clean Si surface and graphene can significantly change the bandstructure of graphene. This is caused by the covalent bonding formed by C and surface Si atoms, which changes the pi-band network of the graphene layer. The dispersion curves and density of states calculations show that the bonded Si-C surface states are highly delocalized and located near the Fermi energy. Adsorption energy indicates that the graphene flakes and nanoribbons are stable on clean Si(100) surfaces.","abstract_has_math":false,"creators":["Xu, Yang"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":["Aluru, Narayana R."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:09:47Z","date_published":"2015-09-25T20:09:47Z","updated_at":"2026-07-22T22:26:15Z","subjects":["Nanotechnology"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3395548"],"render_values":[{"text":"(MiAaPQ)AAI3395548","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/81152","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Aluru, Narayana R."]},{"key":"dc:creator","label":"Author","values":["Xu, Yang"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:09:47Z","10000-01-01","2009"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Nanotechnology"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/81152","(MiAaPQ)AAI3395548"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["In addition to the multiscale method, we present an ab initio study of electronic properties of graphene flakes and nanoribbons adsorbed on clean and H-passivated (100) silicon surfaces. The graphene electronic properties are not perturbed by the H-passivated Si substrate. In contrast, the interaction between the clean Si surface and graphene can significantly change the bandstructure of graphene. This is caused by the covalent bonding formed by C and surface Si atoms, which changes the pi-band network of the graphene layer. The dispersion curves and density of states calculations show that the bonded Si-C surface states are highly delocalized and located near the Fermi energy. Adsorption energy indicates that the graphene flakes and nanoribbons are stable on clean Si(100) surfaces.","Made available in DSpace on 2015-09-25T20:09:47Z (GMT). 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The graphene electronic properties are not perturbed by the H-passivated Si substrate. In contrast, the interaction between the clean Si surface and graphene can significantly change the bandstructure of graphene. This is caused by the covalent bonding formed by C and surface Si atoms, which changes the pi-band network of the graphene layer. The dispersion curves and density of states calculations show that the bonded Si-C surface states are highly delocalized and located near the Fermi energy. Adsorption energy indicates that the graphene flakes and nanoribbons are stable on clean Si(100) surfaces.","Made available in DSpace on 2015-09-25T20:09:47Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3395548.pdf: 5432938 bytes, checksum: 895c606b5ef708b16ba300e06a5872c4 (MD5) Previous issue date: 2009","Embargo set by: Seth Robbins for item 82433 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","109 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2009."],"dc:identifier":["http://hdl.handle.net/2142/81152","(MiAaPQ)AAI3395548"],"dc:language":["eng"],"dc:subject":["Nanotechnology"],"dc:title":["Electrostatic Analysis of Nanoelectromechanical Systems"],"dc:type":["text"],"thesis:degree_discipline":["Electrical and Computer Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:15Z"}