Microplasma Transistor With Quasi Metal-Oxide-Semiconductor (mos)/metal-Insulator-Metal (Mim) Electron Emitters

Modeling of these devices entailed solving the differential form of Poisson's equation, subject to particle flux continuity of the cathode. Comparison of the model predictions with experimental estimates of the sheath potential shows agreement between the two to within 5% over the entire range in voltage investigated. This simulation, in tandem with the measured sheath potential, provides a new probeless method to determine the electron density at the sheath edge.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical and Computer Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Chen, Kuo-Feng

Contributors dc:contributor

• J. Gary Eden

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI3314743

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/81075