Microplasma Transistor With Quasi Metal-Oxide-Semiconductor (mos)/metal-Insulator-Metal (Mim) Electron Emitters
type: CreativeWork
description: Modeling of these devices entailed solving the differential form of Poisson's equation, subject to particle flux continuity of the cathode. Comparison of the model predictions with experimental estimates of the sheath potential shows agreement between the two to within 5% over the entire range in voltage investigated. This simulation, in tandem with the measured sheath potential, provides a new probeless method to determine the electron density at the sheath edge.
abstract: Modeling of these devices entailed solving the differential form of Poisson's equation, subject to particle flux continuity of the cathode. Comparison of the model predictions with experimental estimates of the sheath potential shows agreement between the two to within 5% over the entire range in voltage investigated. This simulation, in tandem with the measured sheath potential, provides a new probeless method to determine the electron density at the sheath edge.
author: Chen, Kuo-Feng
language: eng
keywords: Engineering, Electronics and Electrical
date published: 2015-09-25T20:09:30Z
date modified: 2026-07-22T22:26:15Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois at Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/81075