Nanoscale Selective Area Epitaxy for Optoelectronic Devices

Self-assembled quantum dots have been heavily researched in recent years because of the potential applications to quantum electronic and optoelectronic devices they present. The nonuniformity and random ordering resulting from the self-assembly processes, however, are detrimental to potential applications, prohibiting the type of engineering control necessary for complex systems. The work presented in this document has sought to overcome the limitations of self-assembly by combining selective area epitaxy via metal-organic chemical vapor deposition (MOCVD) with high-resolution electron beam lithography to achieve lateral control over semiconductor structures at the nanometer scale. Two different structures are presented. The first is patterned quantum dots which improve on the uniformity and order of similar, self-assembled quantum dots. The second is an entirely novel structure, the nanopore active layer, which demonstrates the potential for this process to extend beyond the constraints of self-assembly. The nanopore active layer consists of a periodic array of high bandgap barrier regions perturbing a lower bandgap planar quantum well. Experimental and theoretical results for both structures are presented.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical and Computer Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Elarde, Victor Christopher

Contributors dc:contributor

• Coleman, James J.

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI3269887

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/81008