{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/81008"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/81008","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Nanoscale Selective Area Epitaxy for Optoelectronic Devices","abstract":"Self-assembled quantum dots have been heavily researched in recent years because of the potential applications to quantum electronic and optoelectronic devices they present. The nonuniformity and random ordering resulting from the self-assembly processes, however, are detrimental to potential applications, prohibiting the type of engineering control necessary for complex systems. The work presented in this document has sought to overcome the limitations of self-assembly by combining selective area epitaxy via metal-organic chemical vapor deposition (MOCVD) with high-resolution electron beam lithography to achieve lateral control over semiconductor structures at the nanometer scale. Two different structures are presented. The first is patterned quantum dots which improve on the uniformity and order of similar, self-assembled quantum dots. The second is an entirely novel structure, the nanopore active layer, which demonstrates the potential for this process to extend beyond the constraints of self-assembly. The nanopore active layer consists of a periodic array of high bandgap barrier regions perturbing a lower bandgap planar quantum well. Experimental and theoretical results for both structures are presented.","abstract_html":"Self-assembled quantum dots have been heavily researched in recent years because of the potential applications to quantum electronic and optoelectronic devices they present. The nonuniformity and random ordering resulting from the self-assembly processes, however, are detrimental to potential applications, prohibiting the type of engineering control necessary for complex systems. The work presented in this document has sought to overcome the limitations of self-assembly by combining selective area epitaxy via metal-organic chemical vapor deposition (MOCVD) with high-resolution electron beam lithography to achieve lateral control over semiconductor structures at the nanometer scale. Two different structures are presented. The first is patterned quantum dots which improve on the uniformity and order of similar, self-assembled quantum dots. The second is an entirely novel structure, the nanopore active layer, which demonstrates the potential for this process to extend beyond the constraints of self-assembly. The nanopore active layer consists of a periodic array of high bandgap barrier regions perturbing a lower bandgap planar quantum well. Experimental and theoretical results for both structures are presented.","abstract_has_math":false,"creators":["Elarde, Victor Christopher"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":["Coleman, James J."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:09:12Z","date_published":"2015-09-25T20:09:12Z","updated_at":"2026-07-22T22:26:15Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3269887"],"render_values":[{"text":"(MiAaPQ)AAI3269887","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/81008","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Coleman, James J."]},{"key":"dc:creator","label":"Author","values":["Elarde, Victor Christopher"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:09:12Z","10000-01-01","2007"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/81008","(MiAaPQ)AAI3269887"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Self-assembled quantum dots have been heavily researched in recent years because of the potential applications to quantum electronic and optoelectronic devices they present. The nonuniformity and random ordering resulting from the self-assembly processes, however, are detrimental to potential applications, prohibiting the type of engineering control necessary for complex systems. The work presented in this document has sought to overcome the limitations of self-assembly by combining selective area epitaxy via metal-organic chemical vapor deposition (MOCVD) with high-resolution electron beam lithography to achieve lateral control over semiconductor structures at the nanometer scale. Two different structures are presented. The first is patterned quantum dots which improve on the uniformity and order of similar, self-assembled quantum dots. The second is an entirely novel structure, the nanopore active layer, which demonstrates the potential for this process to extend beyond the constraints of self-assembly. The nanopore active layer consists of a periodic array of high bandgap barrier regions perturbing a lower bandgap planar quantum well. Experimental and theoretical results for both structures are presented.","Made available in DSpace on 2015-09-25T20:09:12Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3269887.pdf: 4499914 bytes, checksum: 3128d8c4ed8b0fb2873976754a0c2619 (MD5) Previous issue date: 2007","Embargo set by: Seth Robbins for item 82290 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","123 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007."]},{"key":"dc:title","label":"Title","values":["Nanoscale Selective Area Epitaxy for Optoelectronic Devices"]}]}],"canonical_facts":{"dc:contributor":["Coleman, James J."],"dc:creator":["Elarde, Victor Christopher"],"dc:date":["2015-09-25T20:09:12Z","10000-01-01","2007"],"dc:description":["Self-assembled quantum dots have been heavily researched in recent years because of the potential applications to quantum electronic and optoelectronic devices they present. The nonuniformity and random ordering resulting from the self-assembly processes, however, are detrimental to potential applications, prohibiting the type of engineering control necessary for complex systems. The work presented in this document has sought to overcome the limitations of self-assembly by combining selective area epitaxy via metal-organic chemical vapor deposition (MOCVD) with high-resolution electron beam lithography to achieve lateral control over semiconductor structures at the nanometer scale. Two different structures are presented. The first is patterned quantum dots which improve on the uniformity and order of similar, self-assembled quantum dots. The second is an entirely novel structure, the nanopore active layer, which demonstrates the potential for this process to extend beyond the constraints of self-assembly. The nanopore active layer consists of a periodic array of high bandgap barrier regions perturbing a lower bandgap planar quantum well. Experimental and theoretical results for both structures are presented.","Made available in DSpace on 2015-09-25T20:09:12Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3269887.pdf: 4499914 bytes, checksum: 3128d8c4ed8b0fb2873976754a0c2619 (MD5) Previous issue date: 2007","Embargo set by: Seth Robbins for item 82290 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","123 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007."],"dc:identifier":["http://hdl.handle.net/2142/81008","(MiAaPQ)AAI3269887"],"dc:language":["eng"],"dc:subject":["Engineering, Electronics and Electrical"],"dc:title":["Nanoscale Selective Area Epitaxy for Optoelectronic Devices"],"dc:type":["text"],"thesis:degree_discipline":["Electrical and Computer Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:15Z"}