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University of Illinois at Urbana-Champaign
Development of Iridium-Based Gate Structure for Indium Aluminum Arsenide/indium Gallium Arsenide/indium Phosphide Enhancement-Mode and Depletion-Mode High Electron Mobility Transistors
Abstract
dc:descriptionConsequently, Ir-based gate metallization has a potential to replace conventional gate metals such as Ti/Pt/Au for D-HEMTs and Pt/Ti/Pt/Au for E-HEMTs. Due to the high thermal stability of Ir-based gate contacts, highly reliable E/D-HEMT circuit utilizing Ir-based gate structure can be realized.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Kim, Seiyon
- Contributors dc:contributor
-
- Adesida, Ilesanmi
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI3199049
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/80928