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Showing 1 to 20 of 527 for “"Indium"”.
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Indium Phosphide Based Indium Arsenide Quantum Dot Infrared Photodetectors
Based on the developed QD growth techniques, photoconductive InAs/InAlGaAs/InP QDIPs grown on InP by MBE technique were presented. These devices demonstrated responses to normal incident photoexcitations in the 5-18-mum range. The QDIP device based on bound-to-bound transitions shows a peak …
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Mechanisms of the Reactive Sputtering of Indium in Argon-Nitrogen and Nitrogen-Oxygen Discharges: Growth of Indium-Nitride, Indium-Oxynitride and Indium-Oxide Films
Made available in DSpace on 2014-12-14T16:00:42Z (GMT). No. of bitstreams: 1 8009116.pdf: 4068822 bytes, checksum: 396bc6d13f3353256bf717f4c6cf9bf5 (MD5) Previous issue date: 1979
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High Performance Indium-Gallium-Arsenide / Indium-Aluminum-Arsenide Transistors Grown on Indium-Phosphide by Molecular Beam Epitaxy
Described in this thesis are the growth by molecular beam epitaxy (MBE) and characteristics of InGaAs/InAlAs transistors. Superior properties of the InGaAs/InAlAs system have attracted a great deal of interest in electronic and optical device applications for this material system, and spurred …
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Submicron Scaling in Indium Phosphide/indium Gallium Arsenide Single Heterojunction Bipolar Transistors
Measurement-based characterization of SHBTs scaled down to 0.35 mum was performed, and detailed understanding of do and RF scaling properties was developed. Important scaling phenomena that emerge as the emitter width is scaled to the deep submicron regime were identified and analyzed. A unique …
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Corrosion and electrochemical behavior of Indium and Indium-Bismuth alloys in hydrochloric acid
… 3N HCl solutions, the selective dissolution of indium was the predominant mechanism in the corrosion of In-Bi alloys. The corrosion was always accompanied by a phase change on the surface and the corrosion rates of In-Bi alloys were found to increase in the presence of oxygen.</p> <p>The …
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Synthesis, characterization, and biotemplated assembly of indium nitride and indium gallium nitride nanoparticles
… average size of 6.2 nm. Based on this synthesis, indium-rich InGaN nanoparticles were synthesized and characterized. Chemical, structural, and optical analysis indicated up to 10% gallium incorporation before encountering the miscibility gap. Using CdSe nanoparticles as a model system, M13 …
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Submicron Scaling of Indium Phosphide/indium Gallium Arsenide Heterojunction Bipolar Transistors Toward Terahertz Bandwidths
This work extends the operating speed of InP HBTs to frequencies of fT = 604 GHz though aggressive delay reductions and advanced fabrication processes. Delay reduction is employed by a combination of vertical scaling, lateral scaling, and epitaxial engineering to reduce the transit and charging …
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Electronic Thermal Conductivity of Superconducting Lead - Manganese, Indium - Manganese, and Indium - Chromium Alloy Films
Made available in DSpace on 2015-05-13T15:22:05Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7709150.PDF: 2639422 bytes, checksum: f0bec11959060a1e0374a08c1ebfbdc4 (MD5) Previous issue date: 1976
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The Characterization of Liquid Phase Epitaxial Indium-Gallium - Arsenide - Phosphide and Indium-Gallium - Arsenide
The growth of InGaAsP and InGaAs by liquid phase epitaxy (LPE) on InP substrates has been investigated to obtain the optimum crystal growth parameters to produce high quality epitaxial layers. The lattice mismatch of these layers with respect to the underlying InP substrate was determined by X-ray …
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Specific heat of superconducting films of indium and of indium alloyed with magnetic impurities
… transmission for quench-condensed films of indium, indium-manganese, and indium-chromium. Manganese and chromium are 3-d transition elements, and retain their magnetism when dissolved in indium. This is the first (investigation of this sort where 3-d magnetic impurities have been studied in …
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Electronic thermal conductivity of superconducting lead-manganese, indium-manganese, and indium-chromium alloy films
… of quench-condensed films of lead-manganese and indium-manganese alloys. The results are compared with calculations based on Shiba's theory of superconductors containing magnetic impurities. For Pb-Mn, the value of £ (the normalized position in the energy gap of the excited state assoociated with …
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Hochauflösende Spektroskopie gespeicherter Indium Ionen
New Results in cooling and storing single Indium ions are presented. Cooling almost to the ground state of the trapping potential could be demonstrated for a single ion as well as for a two-ion coulomb-crystal. In high-resolution spectroscopy the narrow-bandwidth clock-transition was measured with …
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Thermoelectric power of indium antimonide.
Thesis: M.S., Massachusetts Institute of Technology, Department of Metallurgy and Materials Science, 1972
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Development of Iridium-Based Gate Structure for Indium Aluminum Arsenide/indium Gallium Arsenide/indium Phosphide Enhancement-Mode and Depletion-Mode High Electron Mobility Transistors
Consequently, Ir-based gate metallization has a potential to replace conventional gate metals such as Ti/Pt/Au for D-HEMTs and Pt/Ti/Pt/Au for E-HEMTs. Due to the high thermal stability of Ir-based gate contacts, highly reliable E/D-HEMT circuit utilizing Ir-based gate structure can be realized.
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Carbon doping and hydrogen passivation in indium gallium arsenide and indium phosphide/indium gallium arsenide heterojunction bipolar transistors grown by metalorganic chemical vapor deposition
The development of carbon doping for producing stable p-type doping profiles in MOCVD-grown GaAs has made MOCVD the preferred technique for production of highly reliable GaAs-based HBT structures. In the InP/InGaAs materials system, however, inefficient C incorporation and amphoteric behavior have …
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Radiation damage in copper indium diselenide
A study of radiation damage in copper indium diselenide (CIS) is presented. Thebuild up of extended defects and the conditions for amorphisation have beenexplored. In particular, dislocation loops have been characterised and theinfluence of composition and temperature on amorphisation has been …
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Superconductivity of Dilute Indium - Thallium Alloys
Made available in DSpace on 2015-05-12T21:41:53Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7000863.PDF: 1747657 bytes, checksum: 1c56817aea0a3561715bf61bacbf36ef (MD5) Previous issue date: 1969
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Pure Quadrupole Resonance in Indium Metal
Made available in DSpace on 2015-05-12T17:03:36Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 6003995.PDF: 4159632 bytes, checksum: d0f4ad233472e35120986aa4b35c0b82 (MD5) Previous issue date: 1960
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