Carbon doping and hydrogen passivation in indium gallium arsenide and indium phosphide/indium gallium arsenide heterojunction bipolar transistors grown by metalorganic chemical vapor deposition

The development of carbon doping for producing stable p-type doping profiles in MOCVD-grown GaAs has made MOCVD the preferred technique for production of highly reliable GaAs-based HBT structures. In the InP/InGaAs materials system, however, inefficient C incorporation and amphoteric behavior have previously prevented the use of C as an intentional dopant, and redistribution problems associated with Zn prevent the use of MOCVD for growth of stable HBTs. This thesis describes recent work on carbon doping of GaAs, InGaAs, and InP, with emphasis placed on issues related to the use of C as the base dopant in InP/InGaAs HBTs.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Stockman, Stephen Andrew

Contributors dc:contributor

• Stillman, Gregory E.

• Engineering, Electronics and Electrical
• Physics, Condensed Matter
• Engineering, Materials Science

Statement dc:rights

• Copyright 1993 Stockman, Stephen Andrew

Language dc:language

eng

Identifier

AAI9543794
(UMI)AAI9543794

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/19921