Three -Port Modulation of Indium Gallium Phosphide/gallium Arsenide Transistor Lasers

Further material structure modification leads to the laser operation (quasi-continuous, ∼200 K) of an InGaP/GaAs/InGaAs HBLET with AlGaAs confining layers and an InGaAs recombination QW incorporated in the p-type base region. Furthermore, the microwave operation and modulation (3 GHz) of an InGaP/GaAs HBT laser is reported using a 450-mum long cavity. The shift in HBT laser operation from spontaneous to stimulated emission is manifest as a distinct change in the HBT current-voltage characteristics, specifically a decrease in the common-emitter current gain (betadc = IC/IB) and the occurrence of even a more striking peak in the small signal (ac) gain betaac = DeltaIC/DeltaIB. Using a larger QW width to enhance the radiative recombination process, direct three-port modulation of a transistor laser at 13.5 GHz is demonstrated using a device with a 4 x 340 mum2 emitter operating at 243 K.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Chan, Richard T.

Contributors dc:contributor

• Feng, Milton

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI3198939

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/80917