{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/80917"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/80917","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Three -Port Modulation of Indium Gallium Phosphide/gallium Arsenide Transistor Lasers","abstract":"Further material structure modification leads to the laser operation (quasi-continuous, ∼200 K) of an InGaP/GaAs/InGaAs HBLET with AlGaAs confining layers and an InGaAs recombination QW incorporated in the p-type base region. Furthermore, the microwave operation and modulation (3 GHz) of an InGaP/GaAs HBT laser is reported using a 450-mum long cavity. The shift in HBT laser operation from spontaneous to stimulated emission is manifest as a distinct change in the HBT current-voltage characteristics, specifically a decrease in the common-emitter current gain (betadc = IC/IB) and the occurrence of even a more striking peak in the small signal (ac) gain betaac = DeltaIC/DeltaIB. Using a larger QW width to enhance the radiative recombination process, direct three-port modulation of a transistor laser at 13.5 GHz is demonstrated using a device with a 4 x 340 mum2 emitter operating at 243 K.","abstract_html":"Further material structure modification leads to the laser operation (quasi-continuous, ∼200 K) of an InGaP/GaAs/InGaAs HBLET with AlGaAs confining layers and an InGaAs recombination QW incorporated in the p-type base region. Furthermore, the microwave operation and modulation (3 GHz) of an InGaP/GaAs HBT laser is reported using a 450-mum long cavity. The shift in HBT laser operation from spontaneous to stimulated emission is manifest as a distinct change in the HBT current-voltage characteristics, specifically a decrease in the common-emitter current gain (betadc = IC/IB) and the occurrence of even a more striking peak in the small signal (ac) gain betaac = DeltaIC/DeltaIB. Using a larger QW width to enhance the radiative recombination process, direct three-port modulation of a transistor laser at 13.5 GHz is demonstrated using a device with a 4 x 340 mum2 emitter operating at 243 K.","abstract_has_math":false,"creators":["Chan, Richard T."],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Feng, Milton"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:08:49Z","date_published":"2015-09-25T20:08:49Z","updated_at":"2026-07-22T22:26:15Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3198939"],"render_values":[{"text":"(MiAaPQ)AAI3198939","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/80917","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Feng, Milton"]},{"key":"dc:creator","label":"Author","values":["Chan, Richard T."]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:08:49Z","10000-01-01","2005"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/80917","(MiAaPQ)AAI3198939"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Further material structure modification leads to the laser operation (quasi-continuous, ∼200 K) of an InGaP/GaAs/InGaAs HBLET with AlGaAs confining layers and an InGaAs recombination QW incorporated in the p-type base region. Furthermore, the microwave operation and modulation (3 GHz) of an InGaP/GaAs HBT laser is reported using a 450-mum long cavity. The shift in HBT laser operation from spontaneous to stimulated emission is manifest as a distinct change in the HBT current-voltage characteristics, specifically a decrease in the common-emitter current gain (betadc = IC/IB) and the occurrence of even a more striking peak in the small signal (ac) gain betaac = DeltaIC/DeltaIB. Using a larger QW width to enhance the radiative recombination process, direct three-port modulation of a transistor laser at 13.5 GHz is demonstrated using a device with a 4 x 340 mum2 emitter operating at 243 K.","Made available in DSpace on 2015-09-25T20:08:49Z (GMT). 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Furthermore, the microwave operation and modulation (3 GHz) of an InGaP/GaAs HBT laser is reported using a 450-mum long cavity. The shift in HBT laser operation from spontaneous to stimulated emission is manifest as a distinct change in the HBT current-voltage characteristics, specifically a decrease in the common-emitter current gain (betadc = IC/IB) and the occurrence of even a more striking peak in the small signal (ac) gain betaac = DeltaIC/DeltaIB. Using a larger QW width to enhance the radiative recombination process, direct three-port modulation of a transistor laser at 13.5 GHz is demonstrated using a device with a 4 x 340 mum2 emitter operating at 243 K.","Made available in DSpace on 2015-09-25T20:08:49Z (GMT). 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